2006
DOI: 10.1109/lpt.2006.871679
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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

Abstract: High-power high-brightness 1.93-m wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43 full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm 2 sr.

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Cited by 12 publications
(7 citation statements)
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“…High brightness light sources have also been realized using tapered laser structures [56,57]. Hence, up to 1.5-W nearly diffraction-limited (M 2 ∼ 1.5) power has been obtain by use of GaSb-based tapered diode lasers emitting at 1.93 m with a narrow waveguide design [57] (see Fig.…”
Section: Antimonide-based Heterojunction Laser Diodesmentioning
confidence: 99%
See 2 more Smart Citations
“…High brightness light sources have also been realized using tapered laser structures [56,57]. Hence, up to 1.5-W nearly diffraction-limited (M 2 ∼ 1.5) power has been obtain by use of GaSb-based tapered diode lasers emitting at 1.93 m with a narrow waveguide design [57] (see Fig.…”
Section: Antimonide-based Heterojunction Laser Diodesmentioning
confidence: 99%
“…Hence, up to 1.5-W nearly diffraction-limited (M 2 ∼ 1.5) power has been obtain by use of GaSb-based tapered diode lasers emitting at 1.93 m with a narrow waveguide design [57] (see Fig. 20).…”
Section: Antimonide-based Heterojunction Laser Diodesmentioning
confidence: 99%
See 1 more Smart Citation
“…Tapered amplifiers 11,12 and lasers 11,13 have accomplished this task in the near-IR, and also at k % 2 lm using GaSb-based structures. [14][15][16] The common feature of those devices is that a ridge waveguide section narrow enough to support only the fundamental lasing mode adjoins a tapered section with typical half-angle %3 . Gain guiding is generally employed, since index guiding is known to inhibit the beam quality of tapered devices.…”
mentioning
confidence: 99%
“…6,7 The resulting waveguiding of the mode implicates the advantage that strong reflections on the interfaces of high-indexsemiconductor material and low-index environment, which would have a detrimental effect on the far field pattern, cannot take place. 6,7 The resulting waveguiding of the mode implicates the advantage that strong reflections on the interfaces of high-indexsemiconductor material and low-index environment, which would have a detrimental effect on the far field pattern, cannot take place.…”
Section: Tapered Quantum Cascade Lasersmentioning
confidence: 99%