GaSb based ternary and quaternary diffused junction devices for TPV applications

Sundaram, V. S.; Saban, S. B.; Morgan, M. D.; Horne, W. E.; Evans, Bruce D.; Ketterl, Joe; Morosini, M. B. Z.; Patel, Navin B.; Field, Halden

doi:10.1063/1.53277

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…Table 1 provides a summary of characteristics, advantages and disadvantages for different types of TPV cell growth methods. [52,62,111] Less precise [113] Ion implantation n/a Not suitable 80-373 K [115] 300-1000 Torr [116] Ionized radiation…”

Section: Tpv Cell Fabricationmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Tpv Cell Fabricationmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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“…Zinc-diffused junctions represent an alternative to the more complicated double heterostructures made by MOCVD, LPE and MBE [43][44][45][46][47][48][49]. Using a pseudo-closed box diffusion process in combination with controlled anodic oxidation and etching, an optimum emitter doping profile can be obtained.…”

Section: Diffused P-n Junctions For Gasb-related Tpv Applicationsmentioning

confidence: 99%

GaSb-related materials for TPV cells

Mauk¹,

Andreev

2003

Semicond. Sci. Technol.

130

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A survey of materials options and technologies for GaSb-related thermophotovoltaic (TPV) cells is presented, followed by an overview of device design principles and issues. This device technology has been developed for thermal-to-electric generator systems with thermal emitter infrared sources operated in the 1000-1200 • C range. Significant results for the growth, material characterization and device performance of TPV cells based on InGaAsSb, InGaSb, AlGaAsSb and InAsSbP fabricated by LPE, MOCVD, MBE and diffusion methods are reviewed. For single-junction TPV cells, epitaxial heterostructures with a ∼0.53 eV bandgap InGaAsSb base layer and wide-bandgap AlGaAsSb or GaSb window/cladding layers (all closely lattice matched to a GaSb substrate) represent the state of the art. As an alternative, a low-cost Zn-diffusion technology for fabrication of InGaAsSb p-n homojunction structures has been developed for producing the high efficiency TPV cells. External quantum yields as high as 90% at wavelengths (around 2000 nm wavelength), and response edges to about 2400 nm wavelength have been obtained with these TPV cells. Multijunction tandem TPV devices based on GaSb top cells and InGaAsSb bottom cells provide even higher performance. TPV cells based on InAsSbP, also reviewed here, have spectral responses in wavelengths in the 2.5-3.5 µm range, and thus provide a means for utilizing radiation from thermal emitters with lower temperatures.

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Spectrally Controlled Thermal Radiation Based on Surface Microstructures for High-efficiency Solar Thermophotovoltaic System

et al. 2014

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GaSb based ternary and quaternary diffused junction devices for TPV applications

Cited by 7 publications

References 7 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

GaSb-related materials for TPV cells

Spectrally Controlled Thermal Radiation Based on Surface Microstructures for High-efficiency Solar Thermophotovoltaic System

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