GaSb/GaAs heteroepitaxy characterized as a stress-free system

Raisin, C.; Rocher, A.; Landa, Georges; Carles, R.; Lassabatere, L.

doi:10.1016/0169-4332(91)90213-4

Cited by 25 publications

(9 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Another possible explanation is although the α-β asymmetry is present in the system, a nearly complete relaxation is observed where a stationary relaxation state is reached by both sets of dislocations. Our data are in disagreement with other works in the InGaAs/GaAs system in the same thickness and composition range [11] where relaxation of only 70% of the total strain was observed; rather it is similar to those observed in other high-misfit (4% and larger) systems, such as InP/GaAs [12], CdTe/ZnTe [13], ZnTe/CdTe [13] or GaSb/GaAs [14]. The small residual strain is probably caused by thermal mismatch or interface imperfections which hinder complete relaxation.…”

Section: Resultscontrasting

confidence: 91%

An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Riesz

Domagała

Nemcsics

2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

Structural properties of highly mismatched InGaAs/GaAs (100) heterostructures grown by molecular beam epitaxy are studied using high-resolution X-ray diffraction. The layers are nearly fully relaxed and show closely tetragonal distortion as shown by asymmetric reflections. However, structural defects show an asymmetry of the orthogonal <110> directions as revealed by reciprocal space maps. Substrate miscut effects are accounted for this difference.

show abstract

Section: Resultscontrasting

confidence: 91%

An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Riesz

Domagała

Nemcsics

2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

show abstract

“…7 This has been attributed to both the characteristics of the system and the particular growth conditions used. 8,10 Though the basic interfacial structure, the nature, and the configuration of the misfit dislocation net at the GaSb/GaAs͑001͒ interface have been reported by these authors, the mechanism for the generation of regular net of 90°m isfit dislocations is still a subject of current discussion. In addition, no detailed study has been reported on the nucleation and evolution of GaSb growth islands, and on the origin of threading defects in GaSb thin films.…”

Section: Introductionmentioning

confidence: 98%

“…It has been recently reported that the high lattice mismatch precludes significant layer-by-layer growth of GaSb on GaAs͑001͒. [7][8][9][10][11][12] The initial growth of GaSb was found to be highly three dimensional, and the misfit dislocations at the GaSb/GaAs interface were found to be primarily of 90°pure edge type which form square nets on the interface plane. 7 This has been attributed to both the characteristics of the system and the particular growth conditions used.…”

Section: Introductionmentioning

confidence: 99%

Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates

Qian

Skowroński

Kaspi

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

The initial stages of molecular beam epitaxy of GaSb on highly mismatched GaAs(001) substrates were investigated. Transmission electron microscopy was used to analyze the defect structure in GaSb islands and at their interfaces with GaAs(001) at different stages of growth. Based on experimental observations, we propose that the semiperiodic net of 90° misfit dislocations at the GaSb/GaAs(001) interface nucleate homogeneously at the leading edges of advancing {111} planes. After nucleation, they glide inwards along the interface plane to reach their equilibrium position. Threading dislocations in GaSb layers were directly correlated with the misfit dislocation net. We demonstrate that there are no threading defects in GaSb islands when their interfaces consist solely of 90° misfit dislocations, and that threading dislocations in the GaSb epilayer are all associated with minority 60° misfit dislocations nucleated in growing islands. The number of threading dislocations per unit area of the GaSb film is found to be independent of GaSb coverage, indicating that island coalescence does not substantially increase the number of 60° dislocations.

show abstract

“…Thus, we do not only consider the quantum confinement effect of GaSb nanoparticles but also deal with the tensile stress effect. Since the thermal expansion coefficient of GaSb (6.8 × 10 −6 K −1 ) [8] is much larger than that of silica glass (0.55 × 10 −6 K −1 ), GaSb nanoparticles contract more than the silica glass upon cooling. The mismatch of thermal expansion coefficients causes a tensile stress exerted upon GaSb nanoparticles, making a distortion in the crystal lattice and leading to an additional small blueshift of the optical absorption edge.…”

Section: Resultsmentioning

confidence: 99%

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO 2 matrix by radio-frequency magnetron co-sputtering

Liu¹,

Jia²,

Zhang³

2000

Applied Physics A: Materials Science & Processing

View full text Add to dashboard Cite

Nanocrystalline GaSb embedded in SiO 2 films was grown by radio-frequency magnetron co-sputtering. X-ray diffraction pattern and transmission electron microscopy (TEM) confirm the existence of GaSb nanocrystals in the SiO 2 matrix. The average size of GaSb nanoparticles is in the range of 3 to 11 nm. Diffuse reflectance spectra were used to characterize the small change of the band gap of the semiconductor. The diffuse reflectance spectra shows that the absorption peaks have a large blueshift of about 4.0 eV of the absorption relative to that of bulk GaSb. It has been explained by quantum confinement effects. Room temperature optical transmission spectra show that the absorption edge exhibits a very large blueshift of about 2.1 eV with respect to that of bulk GaSb in agreement with quantum confinement. 78.66.Fd; 78.20.Ci; 81.15.Cd Photoreflectance (PR) measurements are of considerable interest since they are contactless, require no special mounting of the sample, and can be performed in a variety of transparent ambients [1,2]. The PR spectra have already been proven as a valuable characterization method in the case of GaAs/GaAlAs heterojunction bipolar transistor (HBT) structures [1-3] and InP/InGaAs HBT structures [4]. Reflectance difference spectroscopy (RDS) was used to monitor crystal growth [5,6]. However, little work on the application of diffuse reflectance spectra (DRS) to investigate semiconductor structures and semiconductor interfaces has been reported. In this paper we report a DRS study at room temperature of GaSb nanocrystals embedded in SiO 2 films by radio-frequency (RF) magnetron co-sputtering. The composite films of GaSb-SiO 2 were further characterized by X-ray diffraction (XRD) and by measuring transmission absorption spectra. PACS: Experimental procedureA SiO 2 glassy plate of 60 mm in diameter containing several chips of polycrystalline GaSb was used as a target. The substrates were ultrasonically washed successively in acetone, alcohol, and deionized water in order to obtain a clean surface before being placed into a vacuum chamber. Cleaved NaCl single crystals were used for TEM observation. The chamber was evacuated to a final pressure of 2.67 × 10 −3 Pa before the high-purity (99.999%) argon gas was introduced. During sputtering, the chamber pressure was maintained at 1.5 Pa and the argon gas flow was controlled by a gas valve. The output voltage of the RF sputter gun was 1000 V. All runs started with presputtering of the target for 10-15 min. A stainless steel strip was used as a substrate resistance heater, as well as a substrate holder. The substrate temperature was measured by using a K-type Alumel-Chromel thermocouple mounted on the strip surface.X-ray diffraction (XRD) profiles were collected at room temperature in the range of 15-55 • C with D/max-rA diffractometer, equipped with a Cu K α anode at 40 kV, 100 mA, and CPS 2000. The morphology and the average size of nanoparticles were investigated with an JEM-200CX transmission electron microscope (TEM). Room-temperature optical tran...

show abstract

GaSb/GaAs heteroepitaxy characterized as a stress-free system

Cited by 25 publications

References 9 publications

An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates

Optical diffuse reflectance spectra of GaSb nanocrystals embedded in SiO 2 matrix by radio-frequency magnetron co-sputtering

Contact Info

Product

Resources

About