GaSb superluminescent diodes with broadband emission at 2.55 <i>μ</i>m

Zia, Nouman; Viheriälä, Jukka; Koivusalo, Eero; Virtanen, Heikki; Aho, Antti T.; Suomalainen, Soile; Guina, Mircea

doi:10.1063/1.5015974

Cited by 16 publications

(3 citation statements)

References 26 publications

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“…For the typical edge-emitting geometry, one then expects the resulting output power and spectral linewidth to be intermediate between those of a laser and an LED. To our knowledge, the longest-wavelength semiconductor amplifier to employ gain from interband transitions was reported by Tampere University of Technology in Finland, who demonstrated ASE at 2.55 µm from a non-cascaded GaInAsSb QW gain region [194]. Up to 38 mW of peak power was observed at room temperature, with a spectral bandwidth of 124 nm FWHM.…”

Section: Interband Cascade Ledsmentioning

confidence: 93%

The Interband Cascade Laser

et al. 2020

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We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertical-cavity surface-emitting lasers, interband cascade LEDs, interband cascade detectors, and integrated ICLs are reviewed for the first time.

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Section: Interband Cascade Ledsmentioning

confidence: 93%

The Interband Cascade Laser

et al. 2020

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“…Given the wide range of applications in which they are needed, various types of SLDs have been developed. This includes near-ultraviolet and short-wavelength visible light based on GaN [52][53][54][55][56][57][58][59][60][61][62][63] , to red and NIR wavelengths based on GaAs and InP 24,50,[64][65][66][67][68][69][70][71] , to short-wavelength infrared (SWIR) based on InP and GaSb [72][73][74][75] .…”

Section: Low-coherence Semiconductor Light Sourcesmentioning

confidence: 99%

Low-coherence semiconductor light sources: devices and applications

Lu,

Alkhazragi,

Wang

et al. 2024

npj Nanophoton.

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Since the invention of the laser, there have been countless applications that were made possible or improved through exploiting its multitude of unique advantages. Most of these advantages are mainly due to the high degree of coherence of the laser light, which makes it directional and spectrally pure. Nevertheless, many fields require a moderate degree of temporal or spatial coherence, making conventional lasers unsuitable for these applications. This has brought about a great interest in partially coherent light sources, especially those based on semiconductor devices, given their efficiency, compactness, and high-speed operation. Here, we review the development of low-coherence semiconductor light sources, including superluminescent diodes, highly multimode lasers, and random lasers, and the wide range of applications in which they have been deployed. We highlight how each of these applications benefsits from a lower degree of coherence in space and/or time. We then discuss future potential applications that can be enabled using new types of low-coherence light.

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“…[8,9] The integration of GaSb-based type-I quantum well (QW) SOAs with PICs presents a unique platform for developing hybrid integrated light sources in the 2-4 μm wavelength band. [10][11][12] This integration enables the design of compact and efficient multiwavelength sensors. Furthermore, the combination of GaSb-based SOAs and low-loss PICs facilitates highoutput power generation.…”

Section: Introductionmentioning

confidence: 99%

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si₃N₄ Hybrid Laser for Multiwavelength Spectroscopy

Ojanen,

Viheriälä,

Zia

et al. 2023

Laser & Photonics Reviews

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A discrete, tunable photonic integrated laser is showcased for multiwavelength spectroscopy of CO2, H2S, and H2O. The laser combines an AlGaInAsSb/GaSb type‐I quantum well‐reflective semiconductor optical amplifier with a Si3N4 photonic integrated circuit (PIC). Operating at room temperature, the laser emits at 2670.42, 2629.12, and 2594.27 nm, with mW‐level average powers. The PIC employs a novel approach for achieving switching between three distinct emission wavelengths by using two cascaded tunable Mach–Zehnder interferometers (MZIs) that are connected to three spiral‐shaped narrow‐band distributed Bragg reflectors (DBRs). Phase tuning the arms of the MZIs allows the laser emission wavelength to be switched between the DBRs, while the DBRs themselves offer fine‐tuning of the emission wavelength. This design enables a simpler tuning mechanism with fewer control variables compared to hybrid PIC‐based lasers using Vernier architectures or a combination of multiple semiconductor amplifiers. Low‐loss and broadband MZIs are achieved by employing two interconnected directional couplers, which utilize asymmetric waveguides in the coupling region to effectively control the phase. Besides achieving state‐of‐the‐art performance for Si3N4‐based integrated lasers at 2.6 µm wavelength region, the demonstrated performance of passive components, including MZIs and spiral DBRs, opens new possibilities for mid‐infrared PIC technology.

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GaSb superluminescent diodes with broadband emission at 2.55 μm

Cited by 16 publications

References 26 publications

The Interband Cascade Laser

The Interband Cascade Laser

Low-coherence semiconductor light sources: devices and applications

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si₃N₄ Hybrid Laser for Multiwavelength Spectroscopy

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GaSb superluminescent diodes with broadband emission at 2.55 μm

Cited by 16 publications

References 26 publications

The Interband Cascade Laser

The Interband Cascade Laser

Low-coherence semiconductor light sources: devices and applications

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si3N4 Hybrid Laser for Multiwavelength Spectroscopy

Contact Info

Product

Resources

About

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si₃N₄ Hybrid Laser for Multiwavelength Spectroscopy