2019
DOI: 10.1109/jsen.2019.2903216
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Gate-All-Around Nanowire Junctionless Transistor-Based Hydrogen Gas Sensor

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Cited by 38 publications
(19 citation statements)
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“…Device dimensions and structure of NWJL transistor-based sensor. [134] The bond between the molecules is van der Waals forces, so the binding energy is below 100 meV. [140] Every molecule approaching the catalyst surface polarizes and induces an equivalent dipole in the adsorbent, leading to binding interaction (e.g., 2 to 5 kcal mol −1 for Pt) adsorbate to the surface.…”
Section: The Catalytic Action In Hydrogen Sensingmentioning
confidence: 99%
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“…Device dimensions and structure of NWJL transistor-based sensor. [134] The bond between the molecules is van der Waals forces, so the binding energy is below 100 meV. [140] Every molecule approaching the catalyst surface polarizes and induces an equivalent dipole in the adsorbent, leading to binding interaction (e.g., 2 to 5 kcal mol −1 for Pt) adsorbate to the surface.…”
Section: The Catalytic Action In Hydrogen Sensingmentioning
confidence: 99%
“…Thus, the contribution of electrons is neglected while estimating the channel potential. Equation () represents the electrostatic potential distribution in the channel region described by Poisson's equation in cylindrical coordinates where r and z are the variables for radial and vertical (height) directions for an n ‐channel Gate All Around Junction Less NanoWire MOSFET [ 134 ] δ2φr,z,T,Pδr2+1rδφr,z,T,Pδr+ δ2φr,z,T,Pδz2=qNnormaldεsi …”
Section: Modeling and Simulation Of Mosfet Hydrogen Sensormentioning
confidence: 99%
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“…make a FET based gas sensor efficient and attractive. It must be mentioned that the change in the metal (gate) work function against the adsorption of the gas molecules is the backbone of the FET based gas sensors, where the dipole generation changes the work function of the metal [2]. In addition, the change in the metal work function gets reflected on the threshold voltage of the FET, which shifts significantly.…”
Section: Introductionmentioning
confidence: 99%
“…For the past few years, there have been multiple gas sensor models reported in the literature with an emphasis on different FET architectures. A gate-all-around nanowire junctionless transistor was proposed to work as a hydrogen gas sensor based on the catalytic metal gate approach [2]. Similarly, the scientists have also proposed an alternative to the MOSFET based gas sensors, where they have considered Tunnel FETs (TFETs) to minimize the short channel effects and to reduce the sub-threshold slope of the device [3].…”
Section: Introductionmentioning
confidence: 99%