Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Stockman, A.; Masin, F.; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, G.; Bakeroot, Benoit; Moens, P.

doi:10.1109/ted.2018.2877262

Cited by 84 publications

(20 citation statements)

References 22 publications

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“…Therefore, the MIS p-GaN can effectively suppress the trapping/detrapping behavior and then enhance the gate reliability. Figure 7 compares the V G_BD -I G characteristics of the MIS-HEMT with that of other reported p-GaN gate HEMTs [5,[16][17][18][19][20][21][22]. The MIS-HEMT fabricated in this study exhibited the highest V G_BD and lowest gate leakage current.…”

Section: Resultsmentioning

confidence: 76%

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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

et al. 2021

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A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

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Section: Resultsmentioning

confidence: 76%

“…Figure 7. Comparison between the V G_BD -I G characteristics of the proposed device and those of other devices[5,[16][17][18][19][20][21][22].…”

mentioning

confidence: 99%

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

et al. 2021

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“…[ 24,25 ] The PFE occurs at high temperature due to tunneling of electrons to vacancies through an insulator layer and thermal excitation of electrons form traps to conduction band. [ 24 ] The PFE model is shown in (1), [ 26 ] and can be transferred to (2)

j = C E \exp (- \frac{φ - \sqrt{q^{3} E false/ π ε_{0} ε_{normals}}}{k T})

\ln (j false/ E) = A \sqrt{E} + B

where

A = \frac{q}{k T} \sqrt{\frac{q}{π ε_{0} ε_{normals}}}

B = - \frac{φ}{k T} + \ln (C)

…”

Section: Resultsmentioning

confidence: 99%

“…[24,25] The PFE occurs at high temperature due to tunneling of electrons to vacancies through an insulator layer and thermal excitation of electrons form traps to conduction band. [24] The PFE model is shown in (1), [26] and can be transferred to (2)…”

Section: Comparison Of Gate Leakage Current Of Different Devicesmentioning

confidence: 99%

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen

Wang

Qin

et al. 2022

Physica Status Solidi (a)

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GaN-based high-electron-mobility transistors (HEMTs) have emerged as a promising candidate for next-generation high-efficiency power electronics including high-frequency power amplifiers and high-voltage power switches. [1] However, reliability problems such as gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN HEMTs. [2] The common way to reduce the current collapse of devices is to grow a SiN x as a passivation layer. [3] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [4,5] Remote inductively coupled plasma chemical vapor deposition (ICP-CVD) [6] and low-pressure chemical vapor deposition (LPCVD) [7] techniques have been proposed for damage-free passivation. However, these techniques require longer time, higher cost, and higher temperature. [1] It is still a challenge to obtain lower gate leakage and lower current collapse simultaneously.

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“…Several published studies have investigated the device characteristics of p-GaN gate AlGaN/GaN HEMTs, including their threshold voltage shift, leakage current, and degradation mechanisms. 21,[24][25][26][27][28][29][30][31][32][33] However, prior research focused on the device I-V characteristics. The present study investigated the gate capacitance and device offstate characteristics of E-mode p-GaN gate HEMTs with Schottky gate metallization after gate stress for the first time.…”

Section: Introductionmentioning

confidence: 99%

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Lai

Zhong

Tsai

et al. 2021

Journal of Elec Materi

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This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Cited by 84 publications

References 22 publications

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

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