Gate contact resistive random access memory in nano scaled FinFET logic technologies

Abstract

A full logic-compatible embedded gate contact resistive random access memory (GC-RRAM) cell in the CMOS FinFET logic process without extra mask or processing steps has been successfully demonstrated for high-density and low-cost logic nonvolatile memory (NVM) applications. This novel GC-RRAM cell is composed of a transition metal oxide from the gate contact plug and interlayer dielectric (ILD) in the middle, and a gate contact and an n-type epitaxial drain terminal as the top and bottom electrodes, respectively. It features low-voltage operation and reset current, compact cell size, and a stable read window. As a promising embedded NVM solution, the compact one transistor and one resistor (1T1R) cell is highly scalable as the technology node progresses. Excellent data retention and cycling capability have also been demonstrated by the reliability testing results. These superior characteristics make GC-RRAM one of a few viable candidates for logic NVM for future FinFET circuits.

Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell

“…Owing to its uncomplicated formation, the RRAM device has been widely evaluated for its compatibility with common complementary metal-oxide-semiconductor (CMOS) devices. [14][15][16][17] By virtue of these excellent properties, RRAM has great potential for application in next-generation NVMs.…”