Gate-controlled ionization and screening of cobalt adatoms on a graphene surface

Detection of resonant impurities in graphene by quantum capacitance measurement

“…Figure 1(d) shows the resonant peak of ADOS goes up as n i increases. Although scanning tunneling spectroscopy has proven to be a very effective method to locally probe resonant impurities [12][13][14]16], ADOS in graphene containing resonant impurities is still unexplored experimentally.…”

“…Theoretical predictions suggest that point defects and adsorbates in single-layer graphene induce midgap states near the Dirac point [5][6][7][8][9][10][11]. The local density of states (LDOS) in disordered graphene nanostructures has been investigated theoretically and experimentally [5][6][7][8][9][10][12][13][14][15][16][17]. Previous scanning tunneling spectroscopy studies have shown that robust LDOS peaks appear near a single vacancy in graphene or in hydrogenated graphene [12,13,16] These resonant impurities, however, have not been successfully detected in transport measurements because their transport behavior always mimics that of charged impurities at finite densities [9,10,[18][19][20][21][22][23][24].…”

“…It is still under debate whether these adatoms ionically or covalently bond with carbon atoms of graphene. The changes in the electronic properties of graphene induced by noble-metal adatoms (should be different from the case of vacancies, hydrogenous impurities, and transition metal adatoms) need to be addressed [5,9,12,14,18,23]. Recently, we reported that a very high * These authors contributed equally to this work.…”

Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures

“…[12][13][14] Second, it has been shown that impurities on graphene that contain states near the Dirac point can be charged and discharged as the graphene Fermi level is varied via the applied gate bias. 15,16 This charging and discharging process cause the background doping to have a gate dependence (as impurities are turned 'on' and 'off') , and thus alter the expected gate voltage vs. carrier density dependence.…”

Strain control of magnetism in graphene decorated by transition-metal atoms

“…Recently, graphene has gathered tremendous attention due to its unique electronic and mechanical properties for nanoscale electronics 5 . As a candidate material for spintronic devices, transition-metal-atom-decorated graphene (denoted as TM-graphene hereafter) has been studied extensively in theory 6-9 and experiment [10][11][12][13][14][15] , manifesting some remarkable electronic and magnetic behaviors. Thus, developing a novel method to tune the magnetism of TM-graphene system is quite urgent for future spintronics applications.…”