Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes

Chen, Ruibo; Liu, Hongxia; Yan, Cong; Du, Feibo; Han, Aoran; Zhang, Yuxin; Huang, Wei; Xiang, Qi; Gao, Tianzhi; Wei, Hao; Liu, Zhiwei

doi:10.1109/ted.2023.3244765

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…In the forward conduction mode of the proposed device, Q P4 also contributes to the current flow as a parallel path. This leads to the holes of through the base region of the Q P1 are partly diverted by the Q P4, resulting in a decrease in the current gain of Q P1 [21]. Due to the reduction in minority carriers in P-Well (2), a higher current is required to trigger the inherent SCR.…”

Section: Resultsmentioning

confidence: 99%

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Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Liu,

Wang,

Yang

et al. 2024

Semicond. Sci. Technol.

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The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic PNP transistors for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1), a 96.1% improvement in holding voltage (Vh), and achieves an equivalent Human Body Model (HBM) protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.

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Section: Resultsmentioning

confidence: 99%

“…Recently, Chen et al proposed a gate-controlled low-voltage-triggered SCR (LVTSCR) device, adding a surface current conduction path in the device. By adjusting the bias voltage of the gate, the V h of the device can be improved [21]. However, the device's I t2 is only 1.31 A.…”

Section: Introductionmentioning

confidence: 99%