Gate-controlled quantum dots in monolayer WSe2

Boddison-Chouinard, Justin; Bogan, Alex; Fong, Norman R.; Watanabe, Kenji; Taniguchi, Takashi; Studenikin, Sergei; Sachrajda, Andrew; Korkusiński, Marek; Altıntaş, Abdulmenaf; Bieniek, Maciej; Hawrylak, Paweł; Luican‐Mayer, Adina; Gaudreau, Louis

doi:10.1063/5.0062838

Cited by 23 publications

(17 citation statements)

References 38 publications

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“…With similar device architectures, single quantum dots have been demonstrated in few-layer MoS2, [210] bilayer WSe2, [211] and monolayer WSe2. [211,212] Notably, the number of holes confined in the single dot is estimated to be 19 / 37 in the range of 10-20, approaching the few-carrier regime. As a consequence, excited states can be observed in the Coulomb diamond measurements [211] (arrows in Figure 10d).…”

Section: Gate-defined Quantum Dots Based On 2d Semiconductorsmentioning

confidence: 99%

Gate‐Controlled Quantum Dots Based on 2D Materials

et al. 2022

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Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valleycontrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

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Section: Gate-defined Quantum Dots Based On 2d Semiconductorsmentioning

confidence: 99%

Gate‐Controlled Quantum Dots Based on 2D Materials

et al. 2022

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“…Electrical contacts [Cr (2 nm) / Pt (8 nm)] [41] were subsequently patterned on top of the hBN. To remove any contaminants on the surface of the hBN and the electrical contacts, the sample was thermally annealed in a vacuum furnace (10 −7 Torr) at 300 • C for 30 minutes and further cleaned mechanically using an atomic force microscope tip (AFM) in contact mode [7,21,50,51]. A second polymer stamp was used to subsequently pick-up an hBN flake (34 nm) then a monolayer WSe 2 flake.…”

Section: Device Fabricationmentioning

confidence: 99%

“…Realization of quantum devices based on two-dimensional (2D) materials has attracted significant interest in recent years [1,2]; in particular, advances in fabrication techniques for devices based on transition metal dichalcogenides (TMDs) enabled the realisation of building blocks of quantum circuits such as gate-controlled quantum dots in monolayer and few layer MoS 2 [3][4][5] and WSe 2 [6,7] as well as one-dimensional (1D) channels based on split gate technology [8][9][10][11][12]. 1D channels are of great interest in quantum information science because they have been established as valuable tools for non-invasive readout of semiconducting charge and spin qubits in GaAs [13], SiGe [14], graphene [15][16][17][18], bilayer graphene [19,20] and WSe 2 [21].…”

Section: Introductionmentioning

confidence: 99%

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Luican‐Mayer

Boddison-Chouinard

Bogan

et al. 2022

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Among quantum devices based on 2D materials, gate-defined quantum confined 1D channels are much less explored, especially in the high mobility regime where many body interactions play an important role. We present results of measurements and theory of conductance quantization in a gate-defined one dimensional channel in a single layer of transition metal dichalcogenide material WSe2. In the quasi-ballistic regime of our high mobility sample, we report conductance quantization steps in units of e2/h for a wide range of carrier concentrations. Magnetic field measurements show that as the field is raised higher conductance plateaus move to accurate quantized values and then shift to lower conductance values while the e2/h plateau remains locked. Based on microscopic atomistic tight-binding theory, we show that in this material, valley and spin degeneracies result in 2 e2/h conductance steps for non-interacting holes, suggesting that symmetry breaking mechanisms such as valley polarization dominate the transport properties of such quantum structures.

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“…Although the first gated quantum dots in TMDs have been recently realized 5,6,8,[21][22][23] , charge detection using gated nano-constrictions is yet to be implemented. In this work, we realize a nano-constriction in a monolayer WSe 2 channel and, demonstrate for the first time, charge detection of a gate controlled WSe 2 quantum dot.…”

mentioning

confidence: 99%

“…To increase sample cleanliness and, consequently, reduce contact resistance, the device was cleaned in a vacuum furnace (10 −7 Torr) at 300 • C for 30 minutes. Additionally, remaining polymer residues were removed using an atomic force microscope (AFM) tip in contact mode [23][24][25] . A WSe 2 monolayer and a 37 nm thick hBN flake were exfoliated and identified on independent substrates.…”

mentioning

confidence: 99%

Charge detection using a WSe$_2$ van der Waals heterostructure

Boddison-Chouinard¹,

Bogan²,

Fong³

et al. 2022

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Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van der Waals heterostructure devices with gated nano-constrictions in monolayer WSe 2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits.

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Gate-controlled quantum dots in monolayer WSe2

Cited by 23 publications

References 38 publications

Gate‐Controlled Quantum Dots Based on 2D Materials

Gate‐Controlled Quantum Dots Based on 2D Materials

Anomalous conductance quantization of a one-dimensional channel in monolayer WSe2

Charge detection using a WSe$_2$ van der Waals heterostructure

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