Gate-controlled skyrmion and domain wall chirality

Fillion, Charles-Elie; Fischer, Johanna; Kumar, R. Krishna; Fassatoui, Aymen; Pizzini, S.; Ranno, Laurent; Ourdani, Djoudi; Belmeguenai, M.; Roussigné, Y.; Chérif, S. M.; Auffret, S.; Joumard, Isabelle; Boulle, Olivier; Gaudin, Gilles; Buda-Prejbeanu, L. D.; Baraduc, C.; Béa, Hélène

doi:10.1038/s41467-022-32959-w

Cited by 30 publications

(15 citation statements)

References 57 publications

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“…Electric field control of magnetism in nanostructured systems constitutes a solid route towards reducing power consumption in novel memory architectures. Both electrostatic and magneto-ionic effects have shown to greatly modify parameters like the magnetic anisotropy and the Dzyaloshinskii-Moriya interaction (DMI) leading to a very efficient control of domain wall dynamics and skyrmion motion [1][2][3][4][5][6][7][8] . Magneto-ionics is particularly attractive for low-power applications since it provides non-volatile changes in the magnetic states unlike charge effects, which need the constant application of a gate voltage.…”

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confidence: 99%

Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating

Bhatnagar-Schöffmann

Kovács

Pachat

et al. 2023

Applied Physics Letters

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In this work, we present the magneto-ionic response to ionic liquid gating in Ta/CoFeB/MgO/HfO2 stacks, where heavy metal dusting layers of Ta, W, and Pt are inserted at the Ta/CoFeB and CoFeB/MgO interfaces. Dusting layers of W inserted at the Ta/CoFeB interface increase perpendicular magnetic anisotropy (PMA) by more than 50%, while no significant changes are seen for Pt. In these samples, gating cannot break the PMA seeded at the CoFeB/MgO interface, only relatively small changes in the coercivity can be induced, about 20% for Ta and Pt and 6% for W. At the CoFeB/MgO interface, a significant quenching of the magnetization is seen when W and Ta dusting layers are inserted, which remains unchanged after gating, suggesting a critical deterioration of the CoFeB. In contrast, Pt dusting layers result in an in-plane anisotropy that can be reversibly converted to PMA through magneto-ionic gating while preserving the polycrystalline structure of the MgO layer. This shows that dusting layers can be effectively used not only to engineer magnetic properties in multilayers but also to strongly modify their magneto-ionic performance.

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confidence: 99%

Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating

Bhatnagar-Schöffmann

Kovács

Pachat

et al. 2023

Applied Physics Letters

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“…The Dzyaloshinskii–Moriya interaction (DMI), as one of the origins of chiral magnetism, is currently attracting huge attention in the research community focusing on DW devices or skyrmions. , By modulating the sign and size of the DMI (characterized by the parameter D (J/m 2 )), it is possible to achieve low-power and controllable chiral DW devices . Until now, several feasible methods of DMI control, i.e., chirality switching (CS), have been reported, such as ferroelectric (FE) proximity effect, − gate bias voltage control, , mechanical strain, and hydrogen chemisorption . Interesting simulation results based on CS such as driving DWs and skyrmion-based logic family are also proposed.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current

Lin

et al. 2023

ACS Appl. Mater. Interfaces

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Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin−orbit−torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii−Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼10 2 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.

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“…Thanks to the ultrathin nature of 2D materials, high doping concentration can be realized in graphene [42] of the order of 10 14 hole cm −2 and in FeS 2 [43] of the order of 10 15 hole cm −2 by iongating techniques. Meanwhile, hole-doping is very effective tune in modern spintronics, especially for controlling interfacial DMI in both traditional FM metal/oxides systems [44,45] and 2D magnets [32]. Here, the non-centrosymmetric PbSnO 2 , SnO 2 and GeO 2 monolayers offer interesting opportunities for hole-doping tailored DMI and topological magnetism in nontraditional magnetic systems.…”

Section: Introductionmentioning

confidence: 99%

Hole doping induced ferromagnetism and Dzyaloshinskii–Moriya interaction in the two-dimensional group-IVA oxides

Cui

et al. 2023

J. Phys.: Condens. Matter

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Based on the first-principles calculations, we examine the effect of hole doping on the ferromagnetism and Dzyaloshinskii-Moriya interaction (DMI) for PbSnO2, SnO2 and GeO2 monolayers. The nonmagnetic to ferromagnetic transition and the Dzyaloshinskii-Moriya interaction can emerge simultaneously in the three two-dimensional (2D) IVA oxides. By increasing the hole doping concentration, we find the ferromagnetism can be strengthened for the three oxides. Due to different inversion symmetry breaking (ISB), isotropic DMI is found in PbSnO2，whereas anisotropic DMI presents in SnO2 and GeO2. More appealingly, for PbSnO2 with different hole concentrations, DMI can induce a variety of topological spin textures. Interestingly, a peculiar feature of synchronously switch of magnetic easy axis and DMI chirality upon hole doping is found in PbSnO2. Hence, topological magnetism can be tailored via changing hole density in PbSnO2. Our findings demonstrate the presence and tunability of topological chiral structures in p-type magnets and open up new possibility for spintronics.

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Gate-controlled skyrmion and domain wall chirality

Cited by 30 publications

References 57 publications

Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating

Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating

Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current

Hole doping induced ferromagnetism and Dzyaloshinskii–Moriya interaction in the two-dimensional group-IVA oxides

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