Gate Current Peaks Due to C<sub>GD</sub> Overcharge in SiC MOSFETs Under Short-Circuit Test

Kochoska, Sara; Guitart, Jaume Roig; Richert, Lukas; Vlachakis, Basil

doi:10.1109/ispsd57135.2023.10147438

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Cited by 3 publications

References 6 publications

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Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Zhang,

Hata

et al. 2023

2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)

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Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Zhang,

Hata

et al. 2023

2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)

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Simulation Challenges of SiC MOSFET Switching Performance and Reliability

Victory,

Guitart,

Krishna

et al. 2023

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs

Roig,

Kochoska,

Vlachakis

et al. 2024

SSP

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Under short-circuit (SC) testing SiC MOSFETs exhibit an exceptional increase of gate current (100’s mA) which is not observed in their Si counterparts. Electro-thermal TCAD simulations are capable to accurately mimic all the details of measured gate current waveforms (iG) by capturing multiple physical mechanisms. One of these mechanisms is the thermionic or Schottky emission effect occurring at extreme temperatures (>1300K) for relatively thick gate oxides (>40nm). For the first time, it is proven that TCAD tunneling models, recommended for very thin oxides (<3nm), are suitable to reproduce the thermionic effect and predict iG in SiC MOSFETs under SC test.

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Gate Current Peaks Due to C_GD Overcharge in SiC MOSFETs Under Short-Circuit Test

Cited by 3 publications

References 6 publications

Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Simulation Challenges of SiC MOSFET Switching Performance and Reliability

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs

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Gate Current Peaks Due to CGD Overcharge in SiC MOSFETs Under Short-Circuit Test

Cited by 3 publications

References 6 publications

Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction

Simulation Challenges of SiC MOSFET Switching Performance and Reliability

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs

Contact Info

Product

Resources

About

Gate Current Peaks Due to C_GD Overcharge in SiC MOSFETs Under Short-Circuit Test