Gate current random telegraph noise and single defect conduction

Kaczer, B.; Toledano-Luque, M.; Goes, Wolfgang; Groeseneken, G.

doi:10.1016/j.mee.2013.03.110

Cited by 15 publications

(6 citation statements)

References 8 publications

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“…We have observed that the same defect controls both processes and constructed a corresponding defect state diagram involving a metastable state, akin to Fig. 6 [21]. Based on this picture we have proposed a qualitative model describing the correlated ΔI G and ΔI D distributions (Fig.…”

Section: Trap Impact On Fet Propertiesmentioning

confidence: 93%

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Experimental characterization of BTI defects

Kaczer

Afanas’ev

Rott

et al. 2013

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Selected physical and electrical characterization of gate-oxide defects is reviewed. Interfacial dangling bond defects at interfaces of Si and SiGe are characterized electrically and compared to the electron spin resonance data. It is found that additional silicon dangling bonds (P b0 -ceters) acting as amphoteric interface traps are generated upon oxygen scavenging anneal. A close density of P b0 centers is also found in Si/SiGe/Si/HfO 2 stack. The Ge dangling bond defects (Ge P b1 centers) found at interfaces of SiGe with thermal SiO 2 are shown to behave as acceptor centers. The properties of individual gate-oxide defects in FETs are studied with TimeDependent Defect Spectroscopy (TDDS), an electrical characterization technique. The primary properties of a defect are its capture and emission time constants, both dependent on the local electric gate field and the temperature. Considering the wide distributions of these defect properties, complete characterization of many defects is required over the full gate and drain voltage range from 0 to VDD at different temperatures. This is desirable in order to model degradation for large, "analog" FETs and to model the ΔV th -variability of deeply-scaled FETs. The impact of individual charged defects on transistor properties is then discussed. It is shown that the shift in the threshold voltage is exponentially distributed, with a small fraction of defects causing significant shifts of tens of mV. The average impact per charged defect is experimentally confirmed to be increasing with the gate oxide thickness, the substrate doping, and with the decreasing FET area. The average impact per charged defect is found to be reduced in SiGe substrates, contributing to lower degradation of SiGebased FETs.In low-doped substrates, other sources of variability, such as interface states, are shown to take over. The impact of a single charged gate-oxide defect on the full I-V characteristic is measured and corroborated by atomistic device simulations, thus enabling the path to compact modeling of degraded deeply-scaled FET devices. Finally, the model explaining the correlation between drain and gate current RTN is discussed.

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Section: Trap Impact On Fet Propertiesmentioning

confidence: 93%

“…Based on this picture we have proposed a qualitative model describing the correlated ΔI G and ΔI D distributions (Fig. 13) [21].…”

Section: Trap Impact On Fet Propertiesmentioning

confidence: 99%

Experimental characterization of BTI defects

Kaczer

Afanas’ev

Rott

et al. 2013

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…This hypothesis is supported by a number of studies that link NMP processes to drain noise (22,23) and the gate leakage (24)(25)(26) but disregard the possible existence of metastable states. Interestingly, recent publications (19,(27)(28)(29) report that the drain and gate current noise is sometimes correlated (see Fig. 2) in both pFET or nFET devices.…”

Section: Introductionmentioning

confidence: 93%

(Invited) Multiphonon Processes as the Origin of Reliability Issues

Goes

Toledano-Luque²,

Schanovsky

et al. 2013

ECS Trans.

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Recently, correlated drain and gate current fluctuations have been observed in nano-scaled MOSFETs, indicating that their occurrence is linked to the same defect. One explanation for this observation can be given by the multi-state defect model, which has been developed to describe the hole capture and emission processes involved in the bias temperature instability (BTI). This model relies on a combination of metastable defect states and nonradiative multi-phonon transitions. Our detailed investigations demonstrate that the observed gate current fluctuations and their correlation with the drain noise can be well reproduced using a TAT mechanism based on the multi-state model.

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“…In these systems, fluctuations due to a single impurity leads to random telegraph noise (RTN), corresponding to a Lorentzian spectrum in the frequency domain. In turn, RTN was observed in many semiconductor devices, such as submicrometer metal-oxide-semiconductor field-effect transistors and metal-insulator-metal tunnel junctions [22,23,24,25]. The overall effect of several RTN sources have been suggested as the origin of the 1/f noise in electronic materials [26], as well as in any other context where the dynamics is governed by tunnelling [27].…”

Section: Introductionmentioning

confidence: 99%

Qubit systems subject to unbalanced random telegraph noise: quantum correlations, non-Markovianity and teleportation

2018

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We address the dynamics of quantum correlations in a two-qubit system subject to unbalanced random telegraph noise (RTN) and discuss in details the similarities and the differences with the balanced case. We also evaluate quantum non-Markovianity of the dynamical map. Finally, we discuss the effects of unbalanced RTN on teleportation, showing that noise imbalance may be exploited to mitigate decoherence and preserve teleportation fidelity.

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Gate current random telegraph noise and single defect conduction

Cited by 15 publications

References 8 publications

Experimental characterization of BTI defects

Experimental characterization of BTI defects

(Invited) Multiphonon Processes as the Origin of Reliability Issues

Qubit systems subject to unbalanced random telegraph noise: quantum correlations, non-Markovianity and teleportation

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