Gate dielectric based steady state &amp; transient analysis of channel characteristics for organic thin-film transistors

Nirosha, R.; Agarwal, Rajesh

doi:10.1007/s10854-023-11580-7

Cited by 7 publications

(2 citation statements)

References 72 publications

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“…The simulation parameters employed in this study were drawn from previously published experimental investigations that depict realistic behavior. [ 19,20 ] The dimensions of the channel and the contacts were chosen based on the desired accuracy of the simulation results, and available computational resources. In simulation studies, dimensions are often kept relatively small to allow convergence of the simulation process and reduce computational complexity.…”

Section: Resultsmentioning

confidence: 99%

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Pream Krishna,

Agarwal

2024

Physica Status Solidi (a)

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Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.

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Section: Resultsmentioning

confidence: 99%

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Pream Krishna,

Agarwal

2024

Physica Status Solidi (a)

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“…Nirosha and Agarwal have analyzed the channel characteristics of organic thin-film transistors based on gate dielectric. The authors have shown that the performance of OTFTs can be improved by optimizing the gate dielectric [18]. Hybrid bilayer gate dielectric-based organic thin film transistors have been proposed to address the challenge of high power consumption.…”

Section: Power Consumption and Battery Lifementioning

confidence: 99%

Organic thin film transistors in wearable electronics: prospects in sensor technology and healthcare

Sun

2024

ACE

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This paper critically examines Organic Thin Film Transistors (OTFTs), emphasizing their crucial role in enhancing wearable electronics. Through an in-depth exploration of OTFT fundamental principles and unique characteristics, the paper highlights their advantages, such as unparalleled mechanical flexibility and low-temperature processing capabilities, over traditional semiconductor technologies. It delves into OTFT applications in wearable sensor technologies and healthcare monitoring, illustrating the significant benefits of OTFT integration, including superior energy efficiency and augmented user comfort. Addressing the primary challenges of power consumption, environmental stability, and manufacturing scalability, the study proposes innovative solutions to improve these areas. Central to the research objectives is the enhancement of OTFT performance through strategic material selection, fabrication techniques, and integration approaches to ensure device durability and functionality. The paper concludes with a comprehensive analysis of recent advancements and future directions, underscoring the transformative potential of OTFTs in wearable electronics. This research finds that through interdisciplinary collaboration and innovative engineering, it is possible to mitigate the current limitations of OTFTs, paving the way for their widespread adoption in advanced wearable and healthcare technologies.

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Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD

Ma,

Li,

et al. 2024

Materials Science in Semiconductor Processing

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Gate dielectric based steady state & transient analysis of channel characteristics for organic thin-film transistors

Cited by 7 publications

References 72 publications

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Organic thin film transistors in wearable electronics: prospects in sensor technology and healthcare

Hexagonal Ta2O5 (10 1‾ 0) single-crystalline films grown on LaAlO3 (010) substrates by MOCVD

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