Gate Drive Method Using Wireless Multiplex Transmission of Power and Signal

Sung, Ki Hyuk; Ouchi, Yosuke; Amagai, Sogo; Sagara, Kaito; Kawasaki, Yuma; Sung, Hiyang

doi:10.23919/ipec-himeji2022-ecce53331.2022.9806917

Cited by 1 publication

(4 citation statements)

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“…Abstraction Level 1 (AL1): As already mentioned, wireless gate drivers have been proposed for controlling PWM switching signals that are passed through AL1 and AL2 ITRs [20]- [22], [24]. However, potentially unstable converter states in case of transmitter or receiver failure raise safety concerns when using CW that does not support inherent error correction, or digital modes that require one signal per switching event.…”

Section: Wct Suitability Assessmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Several WCT enabled gate drivers have been presented recently [20]- [24]. These gate drivers predominantly rely on a binary transmission mode to control the state of a single gate driver switch per wireless signal [20]- [22], [24]. They mainly differ in the Radio Frequency (RF) located either in the High Frequency (HF) [21], [22], [24], the Ultra High Frequency (UHF) [25], [26], or the Extremely High Frequency (EHF) [20] International Telecommunication Union (ITU) band respectively.…”

Section: Introductionmentioning

confidence: 99%

“…These gate drivers predominantly rely on a binary transmission mode to control the state of a single gate driver switch per wireless signal [20]- [22], [24]. They mainly differ in the Radio Frequency (RF) located either in the High Frequency (HF) [21], [22], [24], the Ultra High Frequency (UHF) [25], [26], or the Extremely High Frequency (EHF) [20] International Telecommunication Union (ITU) band respectively. In case of receiver or transmitter failure, these binary transmission modes will not ensure system stability, but rely on additional safety measures to avoid shoot-through conditions.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs

Philipps,

Peftitsis

2023

IEEE Open J. Ind. Electron. Soc.

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Active Gate Drivers (AGDs) enhance controllability and monitoring of switching devices, especially for fast switching Silicon Carbide (SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). To support information flow between gate driver, converter, and grid control units, highperformance digital infrastructure is required. This paper proposes a practical strategy of assessing the benefits of using Wireless Communication Technologies (WCTs) in Power Electronics Systems (PESs) employing AGDs. First, Information Transmission Routes (ITRs) are identified and located within a PES. Second, an ITR taxonomy is proposed, classifying ITRs and describing both application scenarios and requirements for every class. After presenting general advantages of WCTs over wired alternatives, seven specific WCTs are individually characterized. Subsequently, the benefits of using WCTs are evaluated for each ITR class, resulting in a specific recommendation for or against the use of WCTs, and at least one appropriate WCT for each ITR. Experimental results demonstrate that wireless control of AGDs for SiC power MOSFETs is feasible using Bluetooth Low Energy (BLE). It is shown that an exemplary AGD can be effectively controlled with an information transmission delay of less than 45 ms, which is sufficient for the intended target applications.

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Section: Wct Suitability Assessmentmentioning

confidence: 99%