Gate effect in charge-density wave nanowires

Slot, E.; Holst, M. A.; Zant, Herre S. J. van der

doi:10.1051/jp4:2005131055

Cited by 5 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…NbSe 3 is a layered compound with a stronger intraplane coupling of chains and a weaker interplane coupling. The conductivity anisotropy in the interlayer (a ) direction reaches r 10 4 at low T [9]. NbSe 3 has two incommensurate CDWs that develop below T 1 145 K and T 2 59 K, opening the gaps 1 and 2 correspondingly.…”

mentioning

confidence: 99%

Observation of Charge Density Wave Solitons in Overlapping Tunnel Junctions

Latyshev

Monçeau²,

Орлов³

et al. 2005

Phys. Rev. Lett.

View full text Add to dashboard Cite

We report on direct observation of microscopic solitons in single electronic processes of the coherent interlayer tunneling in charge density waves. Special nanoscale devices were fabricated from the chain compound using focused ion beams. The spectra were drastically refined by working at high (up to 27 T) magnetic fields. Internal quantum tunneling of electrons can go through solitons that are energetically more favorable quantum particles than electrons. In addition to the interband tunneling across the gap 2Delta, we observe a clear peak at the intermediate voltage approximately 2Delta/3, which we associate with the creation of microscopic solitons, the energy of which must be 2Delta/pi. These solitons might correspond to the long sought special quasiparticle--the spinon.

show abstract

mentioning

confidence: 99%

Observation of Charge Density Wave Solitons in Overlapping Tunnel Junctions

Latyshev

Monçeau²,

Орлов³

et al. 2005

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…Field-effect modulation of CDW transport can also be achieved by the realisation of MOSFET-like devices. Both single particle and collective transport in NbSe 3 were modulated by application of a gate voltage [801,882,883]. For a sample with 5.7×10 −3 µm 2 cross section, the induced quasiparticle was of the order of 0.1% of the total carrier density [882] for a gate voltage of 15 V. For samples with a thickness down to 20 nm at temperatures between 30 and 50 K, the increase of the single particle conduction was up to 2.5 times [801] with a gate of a few V .…”

Section: Gate Effectmentioning

confidence: 99%

Electronic crystals: an experimental overview

Monceau

2013

Preprint

View full text Add to dashboard Cite

This article reviews the static and dynamic properties of spontaneous superstructures formed by electrons. Representations of such electronic crystals are charge density waves and spin density waves in inorganic as well as organic low dimensional materials. A special attention is paid to the collective effects in pinning and sliding of these superstructures, and the glassy properties at low temperature. Charge order and charge disproportionation which occur in organic materials resulting from correlation effects are analysed. Experiments under magnetic field, and more specifically field-induced charge density waves are discussed. Properties of meso-and nanostructures of charge density waves are also reviewed.

show abstract

“…Evaluated from the chain conductivity along the b axis, the conductivity anisotropy in the b-c plane is estimated as b / c ϳ 10, whereas the conductivity ratio perpendicular to the b-c plane, b / a *, may reach the value ϳ10 4 at low temperatures. 8,16 Stacked mesa structures of NbSe 3 with micron in-plane sizes prepared by focused-ion beam 17 were studied in a series of works. 8,9,[18][19][20][21] It was assumed that the CDW order parameter is modulated in the direction transversely to the layers ͑along the a * axis͒.…”

Section: Introductionmentioning

confidence: 99%

Coherent-noncoherent tunneling crossover inNbSe3−NbSe3point contacts

Синченко

Monçeau

2007

Phys. Rev. B

View full text Add to dashboard Cite

Current-voltage ͑IV͒ characteristics of NbSe 3 -NbSe 3 artificial contacts ͑point contacts͒ formed along the a * axis have been investigated in a wide range of contact resistances and temperatures. Depending on the contact resistance, two types of IV characteristics have been observed: the first type observed for low contact resistance demonstrates a conducting peak at zero bias, while the second one for large contact resistance is characterized by a large resistance maximum near the zero bias voltage. Below the second charge-density wave ͑CDW͒ transition ͑T Ͻ 59 K͒, CDW energy gap singularities were observed in the IV characteristics of both types of junctions at V = ⌬ p1 / e and V =2⌬ p2 / e, while the singularity at V = ⌬ p2 / e corresponding to the single particle tunneling of carriers noncondensed into the low-temperature CDW is absent. The experimental results are discussed in the frame of the model of interlayer coherent tunneling of the remaining charge carriers that are not condensed into the CDW.

show abstract

Gate effect in charge-density wave nanowires

Cited by 5 publications

References 5 publications

Observation of Charge Density Wave Solitons in Overlapping Tunnel Junctions

Observation of Charge Density Wave Solitons in Overlapping Tunnel Junctions

Electronic crystals: an experimental overview

Coherent-noncoherent tunneling crossover inNbSe3−NbSe3point contacts

Contact Info

Product

Resources

About