Gate-induced superconductivity in atomically thin MoS2 crystals

Abstract

When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the evolution of gate-induced The ability to produce few-atom-thick two-dimensional (2D) materials of excellent quality 1 2 -such as graphene 3 4 5 , semiconducting transition metal dichalcogenides (TMDs) 6 7 , and phosporene 8 -is an impressive breakthrough in condensed matter physics and nanoelectronics. Upon adding an individual monolayer, the electronic properties of these 2D materials change drastically, so that multilayers of different thickness truly represent distinct

Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects

“…Additionally, materials with giant spin lifetime anisotropy can provide an exciting platform for manipulating the valley and spin degrees of freedom, and for designing novel spintronic devices. [3,4], where the combined system might be engineered for specific applications [5] or might enable the exploration of new phenomena [6,7]. In the field of spintronics, graphene has exceptional charge transport properties but weak spin-orbit coupling (SOC) on the order of 10 µeV [8], which makes it ideal for long-distance spin transport [9-11] but ineffective for generating or manipulating spin currents.…”

“…Following the discovery of graphene in 2004 [1], a host of other two-dimensional (2D) materials have been synthesized and studied, each demonstrating unique properties and showing promise for technological applications [2]. Currently, there is a great deal of interest in layered heterostructures of these materials [3,4], where the combined system might be engineered for specific applications [5] or might enable the exploration of new phenomena [6,7]. In the field of spintronics, graphene has exceptional charge transport properties but weak spin-orbit coupling (SOC) on the order of 10 µeV [8], which makes it ideal for long-distance spin transport [9][10][11] but ineffective for generating or manipulating spin currents.…”

“…This behavior is consistent with Eqs. (5)- (7). Figure 3 shows the numerical spin lifetimes in the case of strong intervalley scattering for graphene on (a) WSe 2 and (b) WS 2 .…”

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

“…Therefore, for the trion contribution to the VHE we expect the profile of the measured Hall voltage to be similar to the one shown in Figure 1d: the signal is largest when the laser spot is focused in the center of the Hall probes and decays as the laser beam is scanned away on either side. and MoS 2 , for instance, we have succeeded in observing gate induced superconductivity, 27,28 ambipolar transport of sufficient quality to determine the band gap, 29,30 and in realizing light emitting transistors. 31 The quality of the devices that we have used for the investigation of the VHE is virtually identical to that of the devices used in these past studies, and we refer to the related publications for all general aspects concerning the device electrical characterization.…”

Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor

“…The transistor's electrical properties were characterized by an Agilent B1500A device analyzer in a high vacuum environment (~2×10 -6 Torr) at room temperature (300 K). The transistor shows an ON-OFF ratio (>10 6 ) and a subthreshold swing of ~166 mV/decade (Fig 2a). The clockwise hysteresis loop in the transfer curves originates from interface trapping states [24,25] .…”