Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn₂O₃ Gate Interface

Abstract

A solution-processed high-performance subvolt (<1 V) tin oxide (SnO2) thin film transistor (TFT) has been fabricated onto an ion-conducting Li–Al2O3 gate dielectric by utilizing a high-permittivity Mn2O3 gate interface. A comparative device characterization of two different TFTs with and without a Mn2O3 gate interface with an ionic dielectric ensures that n-type Mn2O3 induces an additional electron to the semiconductor/dielectric interface trap states. Consequently, the TFT with a Mn2O3 interface achieves a lower subthreshold swing (SS) by keeping the threshold voltage closer to zero compared to the TFT without the Mn2O3 gate interface. This SnO2 TFT with Mn2O3 interface requires only 0.6 V to saturate the drain current, and device performance under such low-voltage (0.6 V) operation exhibits an electron mobility of 17 cm2/V·s with on/off ratio of 3.3 × 104 and subthreshold swing of 124 mV/dec. This work provides a potential approach to achieve a high-performance low-voltage TFT by selecting a suitable combination of dielectric materials.

Magnetic Frustration Effect on the Rate Performance of LiNi0.6Co0.4−xMnxO2 Cathodes for Lithium‐Ion Batteries

“…Due to the high spin states of Mn ions in oxides, both the Mn 2p and Mn 3s peaks are significantly broader, which means that they are composed of multiplet splitting single peaks. [37][38][39][40] Despite the influence of the Auger peak of Ni (Ni LMM ), the Mn 2p 3/2 peaks can be well-fitted by the multiplet peaks with the fitting parameters (binding energy, full width at half maximum, and percentage, listed in Table S5, Supporting Information). [37,39] The peaks between 639 and 641 eV can be ascribed to Mn 3+ multiplet peaks which are located at lower binding energies than Mn 4+ multiplet peaks.…”

Synthesis of Ilmenite-type ε-Mn2O3 and Its Properties

“…It is also worth noting that optical band gaps of other Mn oxides strongly depend on sample morphology. For example, the band gap of α-Mn 2 O 3 is reported as E g = 1.25 eV − or E g = 3.3 eV. , Meanwhile, a band gap in the higher-pressure polymorph, perovskite-type ζ-Mn 2 O 3 , was reported to be E g = 0.45 eV, that is, even slightly smaller than the band gap in ε-Mn 2 O 3 (Figure ).…”

“…Manganese oxides display a range of unique physical and chemical properties and play an important role in basic sciences and in numerous industrial processes and devices. For instance, they are promising materials for applications in diverse magnetic technologies, − for catalysis, , for supercapacitor electrodes, for lithium storage and alkaline battery applications, − and for other goals. − Various Mn-rich oxides, such as manganite perovskites, A 1– x B x MnO 3 , more complex quadruple perovskites, for example, AMn 7 O 12 , − and many others, − demonstrate interesting and often industry-relevant characteristics. Hence, the synthesis of novel, chemically simple, inexpensive, and functional manganese oxides could uncover yet unknown scientific and industrial potentials.…”

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

“…The Internet of Things (IoTs) has stimulated a continuous demand for portable electronics. , For instance, the increasing need for foldable displays and wearable sensors has encouraged in-depth explorations to achieve high-performance thin film transistors (TFTs) with low-voltage operations. , Metal oxides, with advantages such as great optical transparency, high electron mobility, and excellent uniformity, have garnered considerable attention as more promising candidates compared to their amorphous or polycrystalline Si counterparts for these emerging IoT applications . In this regard, a large amount of work has been dedicated to realizing high-performance oxide-based TFTs with battery-powered operations. − To successfully accomplish this goal, the requirements of a channel material with high carrier mobility, a gate dielectric with large capacitance, and a high-quality channel/dielectric interface should all be met, which necessitates significant technological innovations from both materials and device engineering perspectives. − For the TFT channel material, indium-gallium-zinc-oxide (InGaZnO) has been at the center of mainstream research work since its first discovery in 2004, and can offer a high electron mobility (>10 cm 2 ·V –1 ·s –1 ) due to its unique electronic structure with In s-orbital conduction. However, the composition of InGaZnO has a profound effect on its transport behavior, and therefore, the preparation of high-mobility InGaZnO channel usually requires careful control over its composition, complicating the fabrication process. , In addition, In and Ga, which are rare-earth elements, add to the production costs of TFTs, thus constraining these TFTs in cost-effective applications.…”