Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

“…To clarify the leakage performance of the AlGaN layer, I-V characteristics of the AlGaN layer were calculated from I D -V D and I G -V G characteristics of the MIS-HFET and HFET [11]. I D and I G of these two FETs were measured at the drain bias voltage of 1 V. The insulator/ AlGaN interface potential of the MIS-HFET was determined as the gate voltage where the HFET gives the same I D .…”