Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si

Гончарова, Л. В.; Dalponte, M.; Çelik, Özgür; Garfunkel, Eric; Gustafsson, T.; Lysaght, P.; Bersuker, G.; Seiler, David G.; Diebold, Alain C.; McDonald, Robert; Garner, Charles M.; Herr, Dan; Khosla, Rajinder P.; Secula, Erik M.

doi:10.1063/1.2799392

Cited by 5 publications

(8 citation statements)

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Section: Resultssupporting

confidence: 66%

“…Moreover, compare to the Pt gated device the right shift of the V FB and increased EOT indicates the oxide charges or traps are mainly originated from the reaction of the Ti and HfO 2 during the electrode deposition. The interaction of the Ti gate and HfO 2 has also been reported by Goncharova et al 34 JÀV measurements were performed on several MOS capacitors for each sample and we only presented the most repeatable one. The Pt-and Au-gated devices show similar leakage current characteristics at the negative gate voltage as shown in Figure 8, may originate from similar leakage current conduction mechanism and interface properties for both samples.…”

Section: Metal Electrodementioning

confidence: 55%

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Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Wang

et al. 2011

ACS Appl. Mater. Interfaces

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The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

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Section: Resultssupporting

confidence: 66%

Section: Metal Electrodementioning

confidence: 55%

Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Wang

et al. 2011

ACS Appl. Mater. Interfaces

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“…The experiment results denote that the Se in GeSe migrates toward the TE and semiconducting Ge-rich Ge x Se 1– x is locally formed as a conducting filament within the more insulating GeSe matrix in both cases. The present BRS mechanism is distinguished from the previous studies that utilized GeSe as a solid electrolyte for the operation of the electrochemical metallization cells with Ag, Cu, and Ti. ,− The switching mechanism is similar to the oxygen-vacancies-based ReRAM, but the composition of conducting filament (Ge-rich Ge x Se 1– x ) and the method of vacancy generation by Ti are distinguishable . The PGT devices without a Ti layer required the electroforming process as in the conventional ReRAM, while the PTGT devices showed electroforming-free characteristics with improved retention, uniformity, and endurance properties.…”

Section: Introductionmentioning

confidence: 66%

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

Kim

Yoo

Park

et al. 2019

ACS Appl. Mater. Interfaces

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Chalcogenide materials have been regarded as strong candidates for both resistor and selector elements in passive crossbar arrays owing to their dual capabilities of undergoing threshold and resistance switching. This work describes the bipolar resistive switching (BRS) of amorphous GeSe thin films, which used to show Ovonic threshold switching (OTS) behavior. The behavior of this new functionality of the material follows filament-based resistance switching when Ti and TiN are adopted as the top and bottom electrodes, respectively. The detailed analysis revealed that the high chemical affinity of Ti to Se produces a Se-deficient Ge x Se1–x matrix and the interfacial Ti–Se layer. Electroforming-free BRS behavior with reliable retention and cycling endurance was achieved. The performance improvement was attributed to the Ti–Se interfacial layer, which stabilizes the composition of GeSe during the electrical switching cycles by preventing further massive Se migration to the top electrode. The conduction mechanism analysis denotes that the resistance switching originates from the formation and rupture of the high-conductance semiconducting Ge-rich Ge x Se1–x filament. The high-resistance state follows the modified Poole–Frenkel conduction.

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“…This shows that the choice of metal or deposition technique can have a significant impact on the EOT increase. The lower EOT increase with ALD TiN can originate in ͑i͒ chemical reduction of the interfacial SiO 2 by Ti, 25 ͑ii͒ gettering of excess oxygen or H 2 O from the high-, 26 or ͑iii͒ a chemical reaction between OH and Ti at the top surface producing TiO 2 , 25 which is a high-permittivity dielectric with a small contribution to the total EOT.…”

Section: H418mentioning

confidence: 99%

The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics

Ragnarsson

Brunco²,

Yamamoto

et al. 2009

J. Electrochem. Soc.

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The role of moisture ͑H 2 O͒ in atomic-layer-deposited ͑ALD͒ HfO 2 and HfSiO x dielectrics on equivalent oxide thickness ͑EOT͒ scaling is investigated in gate-first devices with physical-vapor-deposited TaN gates. By reducing the amount of H 2 O present in the gate stack, the EOT increase during high-temperature ͑1030°C͒ spike annealing is reduced from 0.5 to 0.25 nm. This was achieved by a premetallization degas at 350-550°C for 3 min. The origin of this improvement lies in the elimination of H 2 O-related reoxidation of the interfacial SiO 2 . By means of temperature-programmed desorption measurements, it is found that the majority of the H 2 O is desorbed between 200 and 600°C with activation energies between ϳ0.3 and ϳ0.5 eV. Furthermore, the H 2 O concentration is dependent on the Hf concentration and nitridation. Non-nitrided HfSiO x with ͓Hf͔ = 40% adsorbs twice as much H 2 O as HfO 2 . Correspondingly, a significantly larger EOT increase is observed for HfSiO x with ͓Hf͔ = 40% as compared to HfO 2 . In HfSiON, the desorbed H 2 O concentration is independent of ͓Hf͔. Finally, a strong metal dependency on the EOT regrowth is observed. With ALD TiN, the EOT increase after thermal treatment is found to be independent of the degas condition at ϳ0.2 nm.

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Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si

Cited by 5 publications

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Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics

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Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si

Cited by 5 publications

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Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Interfacial Reaction and Electrical Properties of HfO2 Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics

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Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode

Interfacial Reaction and Electrical Properties of HfO₂ Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode