Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

Shin, Jong Hoon; Jo, Young Je; Kim, Kwang-Choong; Jang, T.; Kim, Kyu Sang

doi:10.1063/1.3695056

Cited by 16 publications

(3 citation statements)

References 18 publications

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“…The obtained N dependence on the parameter W is shown in Figure 5 b. The density of 2DEG was found to be N G -2 DEG = 0.69 × 10 13 cm −2 at 300 K. This density is smaller than that found from the Hall measurements due to depletion by the Schottky barrier built-in voltage [ 29 , 30 ].…”

Section: Resultsmentioning

confidence: 96%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Resultsmentioning

confidence: 96%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…3, the gate bias dependent peak shift of ER spectrum is very weak, even with its external bias modulation voltage increased up to 4 V. The M-S junction interface density has been obtained by calculating the internal field of p-GaN layer from the ER spectroscopy. Using this information, the sheet carrier density of 2DEG for each samples can be obtained by 19)…”

Section: Resultsmentioning

confidence: 99%

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

Kim

2017

Jpn. J. Appl. Phys.

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In this work, the impact of trap states at the p-(Al)GaN/AlGaN interface has been investigated for the normally-off mode p-(Al)GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) by means of frequency dependent conductance. From the current–voltage (I–V) measurement, it was found that the p-AlGaN gate integrated device has higher drain current and lower gate leakage current compared to the p-GaN gate integrated device. We obtained the interface trap density and the characteristic time constant for the p-type gate integrated HFETs under the forward gate voltage of up to 6 V. As a result, the interface trap density (characteristic time constant) of the p-GaN gate device was lower (longer) than that of the p-AlGaN. Furthermore, it was analyzed that the trap state energy level of the p-GaN gate device was located at the shallow level relative to the p-AlGaN gate device, which accounts for different gate leakage current of each devices.

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“…The theoretically estimated value of V TH ( V TH = qn s / C barrier , n s (= 1.1 × 10 13 cm −2 ), C barrier = barrier capacitance) was found to be −4.64 V (for 21 nm of barrier with barrier dielectric constant of 9) which was much less than the experimentally observed V TH (≈−2.5 V). The observed difference in V TH should be attributed to the partial depletion of 2DEG below the Ni/Au Schottky gate …”

Section: Device Characterization and Analysismentioning

confidence: 97%

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

Kumar

Dolmanan

Tripathy

et al. 2020

Physica Status Solidi (a)

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Herein, a unique device‐design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III‐nitride high electron mobility transistors (HEMTs) by engineering the gate edge toward the drain. The breakdown of such devices with meandering gate‐drain access region (M‐HEMT) are found to be 62% more compared with that of conventional HEMT whereas the on‐resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. The 3D technology computer‐aided design simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.

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Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

Cited by 16 publications

References 18 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

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