Gate potential-controlled current switching in graphene Y-junctions

Araújo, Francisco Ronan Viana; Costa, D. R. da; Lima, F. N.; Nascimento, A. C. S.; Pereira, J. Milton

doi:10.1088/1361-648x/ac0f2b

Cited by 7 publications

(4 citation statements)

References 52 publications

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“…We propose that using a triple junction as a building-block and placing defects strategically offers an excellent control over the current flow and thus can potentially be applied as interconnects in all-graphene nanocircuits. Further tunability of such system could be improved by applying a gate potential [31] to create a switch or transistor-like system. Overall, we establish design rules of defect incorporation in cGNR structures to control electron transport.…”

Section: Discussionmentioning

confidence: 99%

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Čerņevičs

Yazyev

2023

Electron. Struct.

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While bottom-up synthesis allows for precise control over the properties of graphene nanoribbons (GNRs), the use of certain precursor molecules can result in edge defects, such as missing benzene rings that resemble a ``bite''. We investigate the adverse effect of the ``bite'' defects on the electronic transport properties in three chevron-type GNRs and discover that the extent of scattering is governed by the different defect positions. Applying the concepts learned in single GNRs, we engineer defects in two nanostructures to construct prototypical components for nanoelectronics. First, we design a switch, consisting of three laterally fused fluorenyl-chevron GNRs, and place a pair of ``bite'' defects to effectively allow the switching between 4 binary states corresponding to distinct current pathways. Second, we show that conscientious placement of a ``bite'' defect pair can increase conductance between two leads in a triple chevron GNR junction. Overall, we outline how the incorporation of ``bite'' defects affects transport properties in chevron-type nanostructures and provide a guide on how to design nanoelectronic components.

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Section: Discussionmentioning

confidence: 99%

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Čerņevičs

Yazyev

2023

Electron. Struct.

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“…Graphene has good mechanical strength, electrical conductivity, light transmittance, thermal conductivity, and ultra-high electron mobility, which can exceed 15000 cm 2 /V•s at room temperatures, and the resistivity is only 10 −6 Ω•cm, and is the material with the lowest resistivity at present. This provides possibilities to realize further integrated devices and carbon-based 'post-silicon era'electronic devices [2,3]. However, intrinsic graphene is a zero-bandgap semiconductor, and this state is quite stable [4].…”

Section: Introductionmentioning

confidence: 99%

Impact of uniaxial strain on physical properties of zigzag graphene nanoribbons with topological defects

Wang,

Liang,

Wang

et al. 2024

Phys. Scr.

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The synergistic regulation mechanism of uniaxial strain, topological defects, edge passivation atom and nanoribbon width on the geometric and electronic structures of zigzag graphene nanoribbons have been studied systematically by first-principles. It is found that the average formation energy and strain energy of X-N1N2-LD-ZGNR (X=H, F and O, as well as, N1=N2=3, 4 and 5) increase with the increase of uniaxial strain, and this relationship is also dependent of edge passivation atom species and nanoribbon width. And the edge of 55-LD-ZGNR passivating with O and F atoms is more beneficial than H atom for system stability. The stress-strain curve shows that the limiting strain of zigzag graphene nanoribbon depends on edge passivation atom species and nanoribbon width. The Young's modulus in the case of ε>3% and Poisson's ratio except O-33-LD-ZGNR at ε=1% of X-N1N2-LD-ZGNR decrease with the increase of the tensile strain, and is dependent of nanoribbon width and edge atom species. And O-55-LD-ZGNR is easier than F-55-LD-ZGNR and H-55-LD-ZGNR to be stretched or compressed. The magnetism is induced in both H-55-LD-ZGNR and F-55-LD-ZGNR, and remains with the increases of uniaxial tension strain. What is more, magnetic property of O-55-LD-ZGNR can be regulated by applying uniaxial strain, and the band gap of the O-N1N2-LD-ZGNR (N1=N2=3, 4 and 5) system can be regulated by adjusting the uniaxial tensile strain and nanoribbon width. Our research provides a new method to open the graphene band gap, which can provide some new theoretical guidance for the application of graphene in electronic devices and other fields. The band gap of the O-LD-ZGNDR system is opened as the uniaxial tensile strain increases.

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“…Among the unusual properties of graphene, one can mention the perfect transmission of electrons and holes through potential barriers, also known as Klein tunneling, which is a consequence of its gapless electronic spectrum and the chiral nature of carriers in the system [23,24]. That property leads to the absence of backscattering caused by long-range potentials, as well as to an analogy between the transport of Dirac fermions in graphene p-n junctions and the propagation of light in media with negative refraction indices [25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Modulation of persistent current in graphene quantum rings

Araújo¹,

Costa²,

Chaves³

et al. 2022

J. Phys.: Condens. Matter

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We investigate the eﬀect of long-range impurity potentials on the persistent current of graphene quantum rings in the presence of an uniform perpendicular magnetic ﬁeld. The impurity potentials are modeled as ﬁnite regions of the ring with a deﬁnite length. We show that, due to the relativistic and massless character of the charge carriers in graphene, the eﬀect of such non-uniform potentials on the energy spectrum and on the persistent current of the rings can be reliably modeled by assuming a non-perturbed ring and including an additional phase due to the interaction of the charge carriers with the potential. In addition, the results show the presence of localized states in the impurity regions. Moreover, we show that for the case of a potential created by a p-n-p junction, the persistent current can be modulated by controlling the voltage at the junction.

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Gate potential-controlled current switching in graphene Y-junctions

Cited by 7 publications

References 52 publications

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Impact of uniaxial strain on physical properties of zigzag graphene nanoribbons with topological defects

Modulation of persistent current in graphene quantum rings

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