Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Hutin, Louis; Lundberg, Theodor; Chatterjee, Anasua; Crippa, Alessandro; Li, J.; Maurand, Romain; Jehl, X.; Sanquer, M.; González-Zalba, M. Fernando; Kuemmeth, Ferdinand; Niquet, Yann-Michel; Bertrand, Benoît; Franceschi, S. De; Urdampilleta, Matias; Meunier, Tristan; Vinet, M.; Chanrion, Emmanuel; Bohuslavskyi, Heorhii; Ansaloni, Fabio; Yang, Tsung-Yeh; Michniewicz, John; Niegemann, David J.; Spence, Cameron

doi:10.1109/iedm19573.2019.8993580

Cited by 20 publications

(13 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1a, dark gray) connected to a highly doped source (S) and drain (D) reservoir. Metallic polysilicon gates (light gray) partially overlap the channel, each capable of inducing one quantum dot with a controllable number of electrons 16,17 .…”

Section: Resultsmentioning

confidence: 99%

“…S1 and refs. 17,18 ), we focus on a 2 × 2 quantum-dot array as the smallest two-dimensional unit cell in this architecture, that is, a device with two pairs of split-gate electrodes, labeled G i with corresponding control voltages V i . The device studied is similar to the one shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…First, N gate electrodes are patterned, in series along one silicon channel. Second, a dedicated etching process is introduced that creates a narrow trench through the gate electrodes, along the nanowire, thereby splitting each gate electrode into one split-gate pair 17 . The main fabrication steps are described below.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Single-electron operations in a foundry-fabricated array of quantum dots

et al. 2020

View full text Add to dashboard Cite

Silicon quantum dots are attractive for the implementation of large spin-based quantum processors in part due to prospects of industrial foundry fabrication. However, the large effective mass associated with electrons in silicon traditionally limits single-electron operations to devices fabricated in customized academic clean rooms. Here, we demonstrate single-electron occupations in all four quantum dots of a 2 x 2 split-gate silicon device fabricated entirely by 300-mm-wafer foundry processes. By applying gate-voltage pulses while performing high-frequency reflectometry off one gate electrode, we perform single-electron operations within the array that demonstrate single-shot detection of electron tunneling and an overall adjustability of tunneling times by a global top gate electrode. Lastly, we use the two-dimensional aspect of the quantum dot array to exchange two electrons by spatial permutation, which may find applications in permutation-based quantum algorithms.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Single-electron operations in a foundry-fabricated array of quantum dots

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The smallest splittings, δ 20 ST and δ 11 ST Ã , may be associated with valley splittings, while the others involve combinations of valley and orbital excitations in QD mw . The relatively small δ 20 ST , which is associated with QD rf , is in the lower range of values reported for this class of devices (few tens to few hundreds of μeV [45][46][47][48][49]), which may be linked to a weak vertical electrical field and to the condition of the Si=SiO 2 interface. We note that the valley splitting may be enhanced by applying a negative back-gate voltage [47] or by reducing the number of electrons in the DQD, which strengthens vertical confinement.…”

Section: Magnetospectroscopymentioning

confidence: 65%

Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Lundberg

Hutin

et al. 2020

Phys. Rev. X

View full text Add to dashboard Cite

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin-blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin-blockade lifting involving spin states with total spin angular momentum up to S ¼ 3. More particularly, we report the formation of a hybridized spin-quintet state and show triplet-quintet and quintet-septet spin blockade, enabling studies of the quintet relaxation dynamics from which we find T 1 ∼ 4 μs. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot, including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results allow for the possibility of using Si complementary metal-oxide-semiconductor quantum dots as a tunable platform for studying high-spin systems.

show abstract

“…More complex impedance matching schemes, such as double-tuned transformers, break the link between R eff and Q L , enabling larger bandwidths for the same gain [14,44]. Using multiple quantum dots in parallel, such as in a linear array [45], would increase available pump modulation and allow operation at lower Q L , resulting in a larger bandwidth.…”

mentioning

confidence: 99%

Quantum Dot-Based Parametric Amplifiers

Cochrane,

Lundberg,

Ibberson

et al. 2021

Preprint

View full text Add to dashboard Cite

Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8 GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.

show abstract

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Cited by 20 publications

References 14 publications

Single-electron operations in a foundry-fabricated array of quantum dots

Single-electron operations in a foundry-fabricated array of quantum dots

Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Quantum Dot-Based Parametric Amplifiers

Contact Info

Product

Resources

About