Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs

Gonzalez, Jose Ortiz; Etoz, Burhan; Alatise, Olayiwola

doi:10.23919/epe20ecceeurope43536.2020.9215865

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…This stress relatively biases the gate terminal of the GaN HEMT positively that might lead the increase of the trap density in the interfaces between layers under gate oxide layer and hetero-interfaces. These traps can cause the decrease of the threshold voltage of the GaN HEMT in cascode structure by reason of positive charges are injected into the heterointerface where 2DEG is formed, from the gate [17]. This threshold voltage decrease can lead to increase of the drain current of the whole cascode devices.…”

Section: B Variety Of the Stress Levels And Period On Drain Terminalmentioning

confidence: 99%

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Gunaydin

Jahdi

Yuan

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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In this digest, the threshold voltage drift of the GaN cascode power modules is analysed in comparison with similarly-rated Silicon power MOSFET modules under a range of electrothermal gate bias stress. The drift is plotted again a range of gate voltage magnitudes, applied for a verity of stress periods to comprehensively understand how the gate of the lowvoltage Silicon MOSFET in the cascode structure of the GaN module would perform in comparison with a fully-rated Silicon MOSFET, and how does this impact the performance of the high voltage GaN HEMT device, enabling the cascode structure. The importance of the trapping effects on the threshold voltage instability and its drift is revealed for the two devices, with particular attention to possibility of the turn-around effect in a range of temperatures.

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Section: B Variety Of the Stress Levels And Period On Drain Terminalmentioning

confidence: 99%

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Gunaydin

Jahdi

Yuan

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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“…The results showed that the polarity of the VTH shift depended on the leakage currents of the Schottky contact. Measurements of VTH instability using the third quadrant forward voltage as a technique were introduced in [17,18]. The measurement results showed an initial positive VTH shift for positive VGS stress at high voltages however as the recovery time was increased, the VTH shift became negative.…”

Section: Introductionmentioning

confidence: 99%

Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs

Deb

Gonzalez

Bashar

et al. 2022

2022 IEEE Energy Conversion Congress and Exposition (ECCE)

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In GaN e-HEMTs, Threshold Voltage (VTH) shift from gate voltage (VGS) stress depends on the VGS magnitude, stress time, recovery time (time between stress removal and VTH measurement), temperature and pulse polarity (0 to + VGS or -VGS to + VGS). In this paper, unipolar (0 to VGS) and bipolar (-VGS to + VGS) pulsed gate stresses have been performed on GaN e-HEMTs with different VGS magnitudes. The pulse frequency ranges from 25 Hz to 200 kHz. The results show negative VTH shifts for unipolar VGS pulses (between 5V and 8V) at long recovery times (above 500 seconds). The VTH shift is proportional to the VGS pulse magnitude. When the recovery time is increased from 50 milliseconds to 500 seconds, the measured VTH shift becomes more negative, indicating a faster release of trapped electrons than holes. In bipolar stresses, results show both positive and negative VTH shifts with no clear magnitude or frequency dependencies.

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Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs

Cavaliere,

De Santi,

Meneghesso

et al. 2024

2024 IEEE International Reliability Physics Symposium (IRPS)

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Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs

Abstract: Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 4 publications

References 23 publications

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs

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