2020
DOI: 10.1002/adom.202001802
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Gate‐Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self‐Driven Logic Optoelectronics

Abstract: Recently, van der Waals heterojunction based on 2D materials emerges as a promising technology for optoelectronic integrated circuits. Here, a self‐driven optoelectronic logic device is demonstrated based on vertically stacked van der Waals heterojunction of black phosphorus and molybdenum telluride. Through the electrostatic doping by gating, the heterojunction is dynamically tuned to isotype (p‐P and n‐N) and anisotype (p‐N) while the built‐in electric field in the heterojunction is greatly changed. Conseque… Show more

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Cited by 36 publications
(48 citation statements)
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“…The MZI patterns are carved out of the silicon nitride slab by electron beam lithography and plasma dry-etching. The bottom h-BN, BP, MoTe 2 , and top h-BN layers are dry transferred and mechanically stacked onto the silicon nitride waveguide in sequence 29 . Before the final encapsulation of the top h-BN layer, pre-patterned Au pads deposited on a silicon substrate are peeled and mechanically transferred onto the BP and MoTe 2 flakes to form the drain and source electrodes, respectively 29 , 30 .…”
Section: Resultsmentioning
confidence: 99%
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“…The MZI patterns are carved out of the silicon nitride slab by electron beam lithography and plasma dry-etching. The bottom h-BN, BP, MoTe 2 , and top h-BN layers are dry transferred and mechanically stacked onto the silicon nitride waveguide in sequence 29 . Before the final encapsulation of the top h-BN layer, pre-patterned Au pads deposited on a silicon substrate are peeled and mechanically transferred onto the BP and MoTe 2 flakes to form the drain and source electrodes, respectively 29 , 30 .…”
Section: Resultsmentioning
confidence: 99%
“…The bottom h-BN, BP, MoTe 2 , and top h-BN layers are dry transferred and mechanically stacked onto the silicon nitride waveguide in sequence 29 . Before the final encapsulation of the top h-BN layer, pre-patterned Au pads deposited on a silicon substrate are peeled and mechanically transferred onto the BP and MoTe 2 flakes to form the drain and source electrodes, respectively 29 , 30 . To release the air bubbles between the 2D materials and metal electrodes for their atomic level contact, the finished device is finally annealed in a tube furnace filled with a forming gas (95% Ar and 5% H 2 ).…”
Section: Resultsmentioning
confidence: 99%
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“…Even though the anti-ambipolar transport has been observed normally in a type II band alignment, [25][26][27][28][29] it has been a few reports that type I junction also shows rectification properties due to difference in built-in electric field. [30] The TMDs are sensitive to the environment, especially to the substrate. [31,32] The surface condition of the substrate strongly influences the electrical properties of TMDs, e.g., very thin TMDs can be doped by the molecules trapped between TMDs and substrate.…”
Section: Resultsmentioning
confidence: 99%
“…[36] Contrarily, at V BG = 10 V, photocurrent was measured at the interface between 1L and FL WSe 2 as shown in Figure 6d, which support that there is a built-in potential at the homo-junction as we estimated in Figure 4. [30] Therefore, the photocurrent at the junction is associated with spontaneous charge separation induced by tunneling-mediated interlayer recombination . [4,26]…”
Section: Resultsmentioning
confidence: 99%