Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs

Nakayama, Takuro; Mannen, Tomoyuki; Nakajima, Akira; Isobe, Takanori

doi:10.1016/j.microrel.2020.113840

Cited by 2 publications

(1 citation statement)

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“…The second approach consists in the development of test beds able to reproduce realistic stress conditions and monitor the health status of the GaN HEMTs [10], [11], [12], [13], [14], [15]. In [10], a chopper buck circuit, operating at 20-kHz switching frequency, is used to stress GaN HEMTs. However, the power devices were physically removed from the circuit to characterize their degradation in terms of R ON and V TH shifts.…”

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confidence: 99%

In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs

Capasso,

Zanuccoli,

Tallarico

et al. 2023

IEEE Trans. Electron Devices

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This article presents an in-circuit approach to assess the long-term reliability of enhancement-mode GaN HEMTs. A synchronous buck converter conceived for the on-board transistors' characterization is proposed. Here, high-side and low-side power transistors operate under realistic stress conditions, whereas their degradation is assessed by measuring, in-circuit, the full I-V characteristics at prefixed stress times. Moreover, a longterm reliability analysis of commercial 80-V GaN HEMTs is reported. Threshold voltage and ON-state resistance degradation induced by the buck converter operation is investigated, as well as their dependencies on the input voltage, duty cycle, ambient temperature, and output current. Results highlight a clear difference compared to standard dc-stress and reveal a strong correlation between the degradation of the high-side transistor and the input voltage. On the contrary, the low-side transistor degradation is almost insensitive to the different operating regimes of the power converter.

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