Gate trench dry etching technology with damage blocking layer for GaN HEMT devices

Guo, Jiaqi; Wei, Ke; Zhang, Sheng; He, Xiaoqiang; Zhang, Yichuan; Zhang, Ruizhe; Wang, Kaiyu; Wang, Jianchao; Zhou, Ailing; Huang, Sen; Zheng, Yingkui; Chen, Xiaojuan; Wang, Xinhua; Liu, Xinyu

doi:10.1016/j.vacuum.2024.113315

Vacuum

2024

DOI: 10.1016/j.vacuum.2024.113315

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Gate trench dry etching technology with damage blocking layer for GaN HEMT devices

Jiaqi Guo,

Ke Wei,

Sheng Zhang

et al.

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Cited by 2 publications

References 27 publications

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Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching

Yan,

Kong,

Qian

et al. 2024

Optics Communications

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Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching

Yan,

Kong,

Qian

et al. 2024

Optics Communications

View full text Add to dashboard Cite

Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage

Wang,

Wei,

Zhang

et al. 2024

Applied Physics Letters

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In this work, a pulse-mode N2 plasma surface treatment process was proposed as a means of reducing plasma damage and improving the GaN/GaOx ratio on the surface before SiNx deposition, which further contributes to an enhanced density of 2DEG and a reduced sheet resistance. With the pulsed N2 plasma surface treatment combined with subsequent SiNx passivation, the fabricated GaN HEMTs exhibit negligible current collapse and suppressed leakage current. The improved behavior is attributed to the fact that the pulsed N2 plasma is capable of nitriding the surface and removing carbon contaminants as identified through x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. Compared to the traditional continuous-wave-mode N2 plasma, the pulsed N2 plasma pre-treatment effectively prevents continuous collisions of the plasma during acceleration, thereby significantly reducing plasma damage. This work offers valuable insights for surface treatment processes in micro- and nanofabrication.

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Gate trench dry etching technology with damage blocking layer for GaN HEMT devices

Cited by 2 publications

References 27 publications

Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching

Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching

Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage

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