Thin Cu films with a thickness of ~0.5-2.5 mkm were obtained on the surface of Fe, V, and Ti metals using the Plasma Focus (PF) setup. The Cu film thickness was determined on an Ambios XP-200 profilometer. The distribution profiles of Cu, C, О2, N2 and H2 in initial metal samples: Fe, V, and Ti were studied by layer-by-layer analysis on a GDS 850A atomic emission spectrometer. It is shown that the distribution profile and the depth of occurrence of elements depend on the type of metal. Using the method of Rutherford Backscattering Spectrometry (RBS) of 4He+ ions, it was shown that for Cu atoms the depth of occurrence in Fe, V, and Ti, accordingly, is ~106, ~120, and ~160 nm. The depth of occurrence of C atoms in metals: Fe, V, and Ti is ~150, ~120, and ~200 nm, accordingly. From the data of layer-by-layer analysis on an atomic emission spectrometer in the initial samples of metals: Fe, V and Ti, a transition layer with a thickness of ~0.01, accordingly, was found; 0.5 and 1 mm. The presence of this layer is connected with the mechanical processing of metal samples, and the presence of a large number of admixtures in the thin layer of the metal. Thus, Cu atoms are located in the transition layer under the metal surface, which imparts adhesion and electrophysical properties of Cu films.