Gate tunable photoresponse of a two-dimensional p-n junction for high performance broadband photodetector

Tran, Thi Uyen; Nguyen, Duc Anh; Duong, Ngoc Thanh; Park, Dae Young; Nguyen, Duc Manh; Nguyen, Phuong Huyen; Park, Chulho; Lee, Juchan; Ahn, Byung-Wook; Im, Hyunsik; Lim, Seong Chu; Jeong, Mun Seok

doi:10.1016/j.apmt.2021.101285

Cited by 19 publications

(17 citation statements)

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“…In the past decade, a variety of dimensionally abrupt heterostructures have been realized on the basis of layered 2D semiconductors for their atomically smooth surface and pronounced electronic characteristics. − Particularly, the emergence of 2D van der Waals (vdW) heterostructures has expanded the possibility of diverse nanoscale functional devices through integrating disparate materials with artificially stacked architectures. These devices include light-emitting diodes, − nonvolatile memory cells, , Schottky junction devices, , complementary metal-oxide-semiconductor (CMOS) inverters, , and tunneling field-effect transistors. , The most prominent among these vdW nanodevices is the realization of anti-ambipolar transistors, with the first demonstration reported in carbon nanotube–MoS 2 p–n heterostructures and more recently in various vdW heterojunctions, such as single-walled carbon nanotube (SWCNT)–amorphous indium gallium zinc oxide (α-IGZO), pentacene–MoS 2 , WSe 2 –WS 2 , SnO–MoS 2 , InSe–WSe 2 , and ReS 2 –Te heterostructures . The anti-ambipolar behavior can be deemed as deriving from the field-effect transistor (FET) channel composed of p-type and n-type semiconductors in series.…”

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confidence: 99%

“…14,15 The most prominent among these vdW nanodevices is the realization of anti-ambipolar transistors, with the first demonstration reported in carbon nanotube−MoS 2 p−n heterostructures 16 and more recently in various vdW heterojunctions, such as single-walled carbon nanotube (SWCNT)−amorphous indium gallium zinc oxide (α-IGZO), 17 pentacene−MoS 2 , 18 WSe 2 − WS 2 , 19 SnO−MoS 2 , 20 InSe−WSe 2 , 21 and ReS 2 −Te heterostructures. 22 The anti-ambipolar behavior can be deemed as deriving from the field-effect transistor (FET) channel composed of p-type and n-type semiconductors in series. It presents a convex shape transfer characteristic in which the channel electrical conductance peaks at a specific gate bias.…”

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Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

et al. 2022

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The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gatetunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS 2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a highperformance photodetector exhibiting a large on/off current ratio of 4 × 10 4 , fast response of 50 μs, and high detectivity of 1.64 × 10 11 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

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Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

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“…A p – n junction consists of p -type and n -type semiconductors and can considerably boost the redox efficacy of the photocatalyst by preventing the recombination of the photogenerated charge carriers [ 105 , 106 ]. In a plasmonic p – n junction, p -type semiconductor electrons generated by light are transferred into the n -type semiconductor, while at the same time n -type semiconductor holes generated by light are transferred into the p -type semiconductor under light irradiation.…”

Section: Constructed Plasmonic-based Heterojunction Photocatalystsmentioning

confidence: 99%

A review on plasmonic-based heterojunction photocatalysts for degradation of organic pollutants in wastewater

et al. 2023

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Organic pollutants in wastewater are the biggest problem facing the world today due to population growth, rapid increase in industrialization, urbanization, and technological advancement. There have been numerous attempts to use conventional wastewater treatment techniques to address the issue of worldwide water contamination. However, conventional wastewater treatment has a number of shortcomings, including high operating costs, low efficiency, difficult preparation, fast recombination of charge carriers, generation of secondary waste, and limited light absorption. Therefore, plasmonic-based heterojunction photocatalysts have attracted much attention as a promising method to reduce organic pollutant problems in water due to their excellent efficiency, low operating cost, ease of fabrication, and environmental friendliness. In addition, plasmonic-based heterojunction photocatalysts contain a local surface plasmon resonance that enhances the performance of photocatalysts by improving light absorption and separation of photoexcited charge carriers. This review summarizes the major plasmonic effects in photocatalysts, including hot electron, local field effect, and photothermal effect, and explains the plasmonic-based heterojunction photocatalysts with five junction systems for the degradation of pollutants. Recent work on the development of plasmonic-based heterojunction photocatalysts for the degradation of various organic pollutants in wastewater is also discussed. Lastly, the conclusions and challenges are briefly described and the direction of future development of heterojunction photocatalysts with plasmonic materials is explored. This review could serve as a guide for the understanding, investigation, and construction of plasmonic-based heterojunction photocatalysts for various organic pollutants degradation. Graphical abstract Herein, the plasmonic effects in photocatalysts, such as hot electrons, local field effect, and photothermal effect, as well as the plasmonic-based heterojunction photocatalysts with five junction systems for the degradation of pollutants are explained. Recent work on plasmonic-based heterojunction photocatalysts for the degradation of various organic pollutants in wastewater such as dyes, pesticides, phenols, and antibiotics is discussed. Challenges and future developments are also described.

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“…During the past few years, a vast variety of heterostructure photodetectors have been reported by combining ReX 2 with other layered materials such as black phosphorus, [274,275,313,329,330] black arsenic phosphorus, [308] graphene, [331][332][333] InSe, [276,334] GeSe, [277,335] GaSe, [235] and group VI TMDs. [67,75,77,78,233,[237][238][239]278,[336][337][338][339][340][341][342][343] In addition, ReS 2 /ReSe 2 , [79,80,236,344,345] Te/ReS 2 , [269,346,347] Mxene, [348] Se/ ReS 2 , [349,350] and ReS 2 /2D Perovskite [351] The device on a h-BN substrate demonstrated enhanced photocurrent and hence high photoresponsivity due to low Schottky barrier height. Reproduced with permission.…”

Section: Van Der Waals Heterostructure Photodetectorsmentioning

confidence: 99%

“…Ultrafast and ultrasensitive broad-spectrum photodetectors based on vdW vertical heterostructures realized under strong photogating effect.Panel A shows incident laser power dependence of photocurrent, photoresponsivity, detectivity, and EQE in a Te/ReS 2 heterostructure photodetector under 458 and 1062 nm illumination. Reproduced with permission [346]. Copyright 2021, Elsevier Ltd. Panel B shows ambipolar photoresponse from an ReSe 2 /ReS 2 photodetector with ultrafast photoresponse and cut-off frequency exceeding 100 KHz.…”

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confidence: 99%

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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Gate tunable photoresponse of a two-dimensional p-n junction for high performance broadband photodetector

Cited by 19 publications

References 50 publications

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

A review on plasmonic-based heterojunction photocatalysts for degradation of organic pollutants in wastewater

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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Gate tunable photoresponse of a two-dimensional p-n junction for high performance broadband photodetector

Cited by 19 publications

References 50 publications

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

A review on plasmonic-based heterojunction photocatalysts for degradation of organic pollutants in wastewater

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions