Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe₄/MoS₂ Van Der Waals Schottky Diode

Abstract

Keywordsgate-tunable photodetectors, imaging sensors, in-plane anisotropy, Schottky diodes, TaIrTe 4 /MoS 2 van der Waals heterojunctions

Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe2/MoS2 van der Waals Heterojunction for Photodetection and Imaging

“…Furthermore, the band alignments of the Schottky heterojunction with V g are analyzed to explain the change of photoresponse. The position of the Fermi level in MoS 2 can be tuned by negative or positive V g , which would strengthen/weaken the built-in field of the Schottky heterojunction . As shown in Figure S6, the Fermi level of MoS 2 moves toward the conduction band minimum at positive V g and strengthens the built-in field in the interface.…”

“…The position of the Fermi level in MoS 2 can be tuned by negative or positive V g , which would strengthen/weaken the built-in field of the Schottky heterojunction. 53 As shown in Figure S6, the Fermi level of MoS 2 moves toward the conduction band minimum at positive V g and strengthens the built-in field in the interface. In this case, the photogenerated carriers separate more effectively in the depletion region and easier to tunnel a sharp Schottky barrier, which contributes to the increased photocurrent.…”

Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel

“…In Figure 4d, the extracted value of α at V ds = 0 and −1 V is approximately 0.92 and 0.85, respectively, indicating the complicated recombination process such as Shockley−Read−Hall recombination at the interface during transport. 49,50 Therefore, R 635 nm value monotonously decreases with increasing light power density. The maximum R 635 nm values of 656 mA/W (V ds = 0 V) and 17.17 A/W (V ds = −1 V) are obtained at P = 0.169 and 0.037 mW/cm 2 .…”

High-Polarization-Sensitivity Polarimetric Organic Phototransistors Based on Highly Stretchable Semicrystalline Polymer Semiconductors

“…(f) Transient photocurrents of the P-OPTs obtained with polarized light at a frequency of 40 Hz (irradiance: 8.4 mW cm –2 ). (g) Polarized absorption coefficient values of stretched P2 thin film at various strains, (h) normalized transient photocurrents of the P-OPTs, and (i) τ r values of the P-OPTs obtained at θ = 0° (red) and 90° (blue). − …”