Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi<sub>2</sub>O<sub>2</sub>Se for High‐Performance Thermoelectrics

Yang, Fang; Wu, Jing; Suwardi, Ady; Zhao, Yunshan; Liang, Boyuan; Jiang, Jie; Xu, Jianwei; Chi, Dongzhi; Hippalgaonkar, Kedar; Jun, Lu; Ni, Zhenhua

doi:10.1002/adma.202004786

Cited by 58 publications

(46 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[ 7 ] These features make 2D Bi 2 O 2 Se an attractive material for ultrathin electronic and optoelectronic devices. Indeed, application of 2D Bi 2 O 2 Se in various technologies has been extensively studied, including transistors, [ 3d,8 ] memristors, [ 9 ] photodetectors, [ 3b,8a,10 ] gas sensor, [ 11 ] as well as thermoelectric, [ 12 ] photoelectrochemical, [ 13 ] and hybrid superconducting devices. [ 14 ]…”

Section: Introductionmentioning

confidence: 99%

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Liu

Tan

et al. 2021

Small

View full text Add to dashboard Cite

Atomically thin bismuth oxyselenide (Bi2O2Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge‐carrier mobility and good air stability. Recently, the development of Bi2O2Se‐based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2O2Se‐based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2O2Se and representative transition metal dichalcogenides (namely, WS2/Bi2O2Se and MoS2/Bi2O2Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type‐II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time‐resolved and layer‐selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long‐lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2O2Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

show abstract

Section: Introductionmentioning

confidence: 99%

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Liu

Tan

et al. 2021

Small

View full text Add to dashboard Cite

show abstract

“…These corelations make it challenging to improve and optimize the dimensionless figure of merit, zT. To date, there are only few reliable strategies to enhance the zT such as band convergence, scattering manipulation, and lattice thermal conductivity reduction Yang et al, 2021).…”

Section: Introductionmentioning

confidence: 99%

A Systematic Approach for Semiconductor Half-Heusler

et al. 2021

Self Cite

View full text Add to dashboard Cite

The key to designing a half-Heusler begins from the understanding of atomic interactions within the compound. However, this pool of knowledge in half-Heusler compounds is briefly segregated in many papers for specific explanations. The nature of the chemical bonding has been systematically explored for the large transition-metal branch of the half-Heusler family using density-of-states, charge-density, charge transfer, electron-localization-function, and crystal-orbital-Hamilton-population plots. This review aims to simplify the study of a conventional 18-electron configuration half-Heusler by applying rules proposed by renowned scientists to explain concepts such as Zintl-Klemm, hybridization, and valence electron content (VEC). Atomic and molecular orbital diagrams illustrate the electron orbital transitions and provide clarity to the semiconducting behavior (VEC = 18) of half-Heusler. Eighteen-electron half-Heusler usually exhibits good thermoelectric properties owing to favorable electronic structures such as narrow bandgap (<1.1 eV), thermal stability, and robust mechanical properties. The insights derived from this review can be used to design high-performance half-Heusler thermoelectrics.

show abstract

“…At present, according to the equation, the ultrasonication‐assisted liquid phase exfoliation method was used to successfully exfoliate many 2D materials, such as graphene, MoS 2 , WS 2 , TiS 2 , TaSe 2 , h‐BN, and so on. [ 25–67 ]…”

Section: Physicochemical Properties and Synthetic Strategies Of 2d G‐c3n4mentioning

confidence: 99%

2D Graphitic Carbon Nitride for Energy Conversion and Storage

Wang

Liu

et al. 2021

Adv Funct Materials

260

115

View full text Add to dashboard Cite

Graphitic carbon nitride (g‐C3N4) have attracted great attention in the field of energy conversion and storage due to its unique layered structure, tunable bandgap, metal‐free characteristic, high physicochemical stability, and easy accessibility. 2D g‐C3N4 nanosheets have the features of short charge/mass transfer path, abundant reactive sites and easy functionalization, which are beneficial to optimizing their performance in different fields. However, the reviews of the comprehensive applications of 2D g‐C3N4 for energy conversion and storage are rare. Herein, this review first introduces the physicochemical properties of bulk g‐C3N4 and g‐C3N4 nanosheets, and then summarizes the synthetic strategies of 2D g‐C3N4 nanosheets in detail, such as thermal oxidation etching, chemical exfoliation, ultrasonication‐assisted liquid phase exfoliation, chemical vapor deposition, and others. Emphasis is focused on the rational design and development of 2D g‐C3N4 nanosheets for the diversified applications in energy conversion and storage, including photocatalytic H2 evolution, CO2 reduction, electrocatalytic H2 evolution, O2 evolution, O2 reduction, alkali‐metal ion batteries, lithium‐metal batteries, lithium–sulfur batteries, metal‐air batteries, and supercapacitors. Finally, the current challenges and perspectives of 2D g‐C3N4 nanosheets for energy conversion and storage applications are discussed.

show abstract

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Abstract: The ubiquity of low-grade waste heat (<200 °C) in modern electronics presents both challenges in terms of thermal management as well as opportunities in terms of energy recovery.

Cited by 58 publications

References 53 publications

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

A Systematic Approach for Semiconductor Half-Heusler

2D Graphitic Carbon Nitride for Energy Conversion and Storage

Contact Info

Product

Resources

About

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics

Abstract: The ubiquity of low-grade waste heat (<200 °C) in modern electronics presents both challenges in terms of thermal management as well as opportunities in terms of energy recovery.

Cited by 58 publications

References 53 publications

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

A Systematic Approach for Semiconductor Half-Heusler

2D Graphitic Carbon Nitride for Energy Conversion and Storage

Contact Info

Product

Resources

About

Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi₂O₂Se for High‐Performance Thermoelectrics

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers