Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Byun, Young Hee; Shur, M. S.; Peczalski, A.; Schuermeyer, F.L.

doi:10.1109/16.2543

Cited by 48 publications

(16 citation statements)

References 4 publications

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“…For this reason, in this context, several techniques have been proposed to determine these parameters. However, most methods [5]- [7] require measurements at different drain and gate voltages. Although, S-parameter measurements give an accurate determination of the total source-to-drain resistance (even better than dc measurements because series resistance in the bias circuit is eliminated), the temperature coefficient of the separate parameters R s , R d and the channel resistance are difficult to determine accurately due to the difficulty of separating the source and channel resistances in cold-FET [8].…”

Section: External Parasitic Elementsmentioning

confidence: 99%

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

Kameche

Feham

2007

Int J Infrared Milli Waves

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Simple techniques for determining the broadband small signal equivalent circuit (SSEC) of MESFETs are presented in this paper. The intrinsic elements are calculated using two-dimensional method from the Y parameters, which are obtained from the Fourier analysis of the device transient response to voltage-step perturbations at the drain and gate electrodes. Whereas, the parasitic external elements are determined by simple approximations used in transmission line modeling. In addition, a new technique is also proposed to determine the source and drain series resistances. A comparison of the SSEC of three different MESFETs technologies shows that the MESFETs on GaN and 4H-SiC are suitable for high power applications. The method used to determine the intrinsic elements is validated with simulated data obtained by Monte Carlo method.

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Section: External Parasitic Elementsmentioning

confidence: 99%

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

Kameche

Feham

2007

Int J Infrared Milli Waves

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“…In particular, while the methods of refs. [2] and [5] predict decreasing and constant resistances, respectively, all the other criteria yield an increasing R as VGS is decreased. The agreement found (in the whole VGS range) between the results of eq.2 and the constant charge criterion supports the consistency and physical basis of the proposed extraction procedure.…”

Section: Resultsmentioning

confidence: 99%

“…Consequently, by assuming AL = 0 (as in ref. [2]) the channel resistance R,h is overestimated and negative values of the parasitic resistances are required to match Rch with the measured F.…”

Section: A Few Methods To Measure Rs and Rdmentioning

confidence: 97%

“…Fig.6 compares the values of R extracted from eq.2 (full circles) with those obtained a) from the drop of the quasi-Fermi level 9, between the source contact and the edge of the intrinsic device as defined by the constant charge criterion (solid line); b) from the drop of 9, between the source contact and the metallurgical gate edge (constant channel length criterion, dashed line); c) from the method of ref. [2] (dotted line); d) from the method of ref.…”

Section: A New Methods To Extract Rs Rd and Leffmentioning

confidence: 99%

“…As will be demonstrated in section 111, however, the fraction of a sub-micron channel that actually follows the GCA does not have a con- where R:h denotes the average sheet resistance of the intrinsic device. If LG >> AL (as in [2], where LG ranged from 1 to 18pm), AL E 0 can be assumed. Thus, at any given VGS, plots of F versus LG at fixed gate voltage should lead to a straight line intercepting the y-axis at Rs + RD.…”

Section: A Few Methods To Measure Rs and Rdmentioning

confidence: 99%

See 2 more Smart Citations

Extraction of the series resistances and effective channel length of GaAs MESFETs by means of electrical methods: a numerical study

Menozzi

Selmi²,

Gandolfi³

et al.

International Electron Devices Meeting 1991 [Technical Digest]

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This paper presents a numerical study on electrical methods to measure the source and drain resistances and the effective channel length of state of the art Gallium Arsenide MESFETs. In particular, the effects of scaling on the physical meaning and gate voltage dependence of the extracted values are investigated. Fringing effects at the gate edges are found responsible for a substantial bias dependence of the series resistances, hence for possible inaccuracies of extraction procedures that overlook such phenomena. A new extraction technique is also proposed to overcome in part the limitations of conventional approaches.

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Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D model

Brockerhoff¹,

Versteegen²,

Bertenburg³

et al. 1990

Trans Emerging Tel Tech

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Surface effects in planar submicron GaAs MESFET are investigated in detail by use of a quasi twodimensional model taking into account the nonstationary transport effects in the channel which are very important for simulation of submicron structures. The model explains the transconductance compression in submicron MESFET due to the influence of the free surface in the parasitic gate‐source and gate‐drain region. The dependence of device performance on the surface potential is shown.

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Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

Cited by 48 publications

References 4 publications

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

Extraction of the series resistances and effective channel length of GaAs MESFETs by means of electrical methods: a numerical study

Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D model

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