Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach

Banerjee, Pritha; Das, Jayoti

doi:10.1007/s12633-020-00823-5

Silicon

2020

DOI: 10.1007/s12633-020-00823-5

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Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach

Pritha Banerjee

Jayoti Das

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2022

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Cited by 3 publications

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Impacts of material parameters on breakdown voltage and location for power MOSFETs

kumar

Chang

et al. 2022

J Comput Electron

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To improve the electrical performance of power devices, materials used in fabrication need to be analyzed and optimized. By numerical simulations, we reveal that the breakdown voltage (BV) and location of a lateral diffused MOS power device simultaneously depend on trench oxide permittivity. For a given device geometry, while trench oxide permittivity with a certain value leads to a maximal BV, a smaller (larger) value causes electrical breakdown in the Si drift channel around the bottom (top) of the trench. This trend stays the same when Si is replaced by SiC. Our study implies that any byproduct reducing the trench permittivity during trench lling should be avoided.

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Impacts of material parameters on breakdown voltage and location for power MOSFETs

kumar

Chang

et al. 2022

J Comput Electron

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Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis

Banerjee

Das

2022

J. Electron. Mater.

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Design and Comparative Analysis of Heterogeneous Gate Dielectric Nanosheet TFET with Temperature Variance

Jain

Sawhney²,

Kumar³

et al. 2022

Silicon

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Gate Work Function Engineered Trigate MOSFET with a Dual-Material Bottom Gate for Biosensing Applications: a Dielectric-Modulation Based Approach

Cited by 3 publications

References 15 publications

Impacts of material parameters on breakdown voltage and location for power MOSFETs

Impacts of material parameters on breakdown voltage and location for power MOSFETs

Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis

Design and Comparative Analysis of Heterogeneous Gate Dielectric Nanosheet TFET with Temperature Variance

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