2007 IEEE International Electron Devices Meeting 2007
DOI: 10.1109/iedm.2007.4419037
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Gatestacks for scalable high-performance FinFETs

Abstract: formed for contacts. Device width is defined here as Excellent performance (995pA/pm at I0 -94nA/gm and 2Hfin+Wfin. Vdd=IV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193nm immersion lithography and dry etch. PVD TiN electrodes on HfSiO dielectrics are shown to give improved NMOS performance over PEALD TiN whilst poorer conformality, for both dielectric and gate electrode, does not appear to impact… Show more

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Cited by 26 publications
(14 citation statements)
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“…In order to verify accuracy, the models are fitted with measurement data from industrial publications and parameters such as subthreshold slope, DIBL, etc., are plotted with the PTM-MG trends [13,16,[19][20][21][22][23][24][25][26].…”
Section: Ptm-mg Evaluationmentioning
confidence: 99%
“…In order to verify accuracy, the models are fitted with measurement data from industrial publications and parameters such as subthreshold slope, DIBL, etc., are plotted with the PTM-MG trends [13,16,[19][20][21][22][23][24][25][26].…”
Section: Ptm-mg Evaluationmentioning
confidence: 99%
“…A number of intermediate architectures (sometimes called multiple gate FET devices or MuGFETs) have been developed in an attempt to get the best SCE with the minimum process complexity [42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59].…”
Section: B 1'd and 1'd+ Confinementmentioning
confidence: 99%
“…FinFET: Combines double-gate and vertical device concepts for a more manufacturable version of a double gate device [44][45][46][47][48][49][50][51][52][53][54][55].…”
Section: B 1'd and 1'd+ Confinementmentioning
confidence: 99%
“…Even though FinFETs with impressive Idsat/Ioff values comparable to planar bulk MOSFETs have been reported [2], the reported RF figures of merit of FinFETs are comparatively lower [3]. It has been established that the reason for this is the high parasitics associated with FinFETs on account of their three dimensional nature.…”
Section: Introductionmentioning
confidence: 96%