Abstract:Ramp-type junctions of Au − Bi 2 Se 3 − NbN were prepared on top of a bottom gate comprised of a SrTiO 3 gate-insulator film on NbN gate-electrode layer on (100) SrTiO 3 wafer. Two wafers with gate-insulator thickness of 120 and 240 nm were studied, with the former showing higher gate leakage currents Ig at high gate voltages Vg, leading to heating effects and shifting of the junctions conductance spectra versus the voltage bias. At Vg=0 V, the conductance spectra of the low resistance junctions showed zero bi… Show more
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