2007
DOI: 10.1016/j.optcom.2007.06.046
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Gaussian profile laser intensification by nodular defects in mid-infrared high reflectance coatings

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Cited by 11 publications
(4 citation statements)
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“…The height of this nodular defect is 2:3 μm, and the diameter is 1:04 μm. Therefore, previous experiments and theories that identify them as nearly equal [5][6][7][8] are one sided or idealized and are valid just for the first kind of nodule.…”
Section: Discussionmentioning
confidence: 99%
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“…The height of this nodular defect is 2:3 μm, and the diameter is 1:04 μm. Therefore, previous experiments and theories that identify them as nearly equal [5][6][7][8] are one sided or idealized and are valid just for the first kind of nodule.…”
Section: Discussionmentioning
confidence: 99%
“…Nodular defects in multilayer dielectric films have been widely investigated since the 1990s [1][2][3][4][5][6][7][8][9][10][11][12][13]. Nodules are initiated by seed particles present on the substrate or deposited in the film during deposition and form a parabolic structure with the subsequent deposition of materials [1,2].…”
Section: Introductionmentioning
confidence: 99%
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“…For the theoretical effort, we have utilized the FDTD method to quantify the electric-field distribution within the coating layers in the presence of the pre-defined defects of different shapes. This approach is motivated by the fact that laser-induced damage within thin film layers is strongly correlated with electric field intensification due to interference between incident beam and secondary waves created by the presence of thin film interfaces and coating defects [8][9][10][11]. Experimentally, we utilize femtosecond laser machining to fabricate mitigation structures suggested by the simulation work and to further examine the manufactured feature for damage resistance as well as to validate the theoretical predication.…”
Section: Introductionmentioning
confidence: 99%