2007
DOI: 10.1149/1.2743140
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Gd[sub 0.6]Sr[sub 0.4]Fe[sub 0.8]Co[sub 0.2]O[sub 3−δ]: A Novel Type of SOFC Cathode

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Cited by 15 publications
(8 citation statements)
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“…Gd‐containing Fe‐Co‐based perovskites have been studied previously, and they have remarkably high activities toward the reduction of oxygen in SOFCs . This has been suggested to be due to the creation of a two‐phase compound with a unique microstructure .…”
Section: Introductionsupporting
confidence: 77%
See 1 more Smart Citation
“…Gd‐containing Fe‐Co‐based perovskites have been studied previously, and they have remarkably high activities toward the reduction of oxygen in SOFCs . This has been suggested to be due to the creation of a two‐phase compound with a unique microstructure .…”
Section: Introductionsupporting
confidence: 77%
“…In this study, A‐site deficient Fe‐Co‐based perovskites with Gd and Sr as A‐site cations are synthesized and studied using cone‐shaped electrodes and electrochemical impedance spectroscopy (EIS). Gd‐containing Fe‐Co‐based perovskites have been studied previously, and they have remarkably high activities toward the reduction of oxygen in SOFCs . This has been suggested to be due to the creation of a two‐phase compound with a unique microstructure .…”
Section: Introductionmentioning
confidence: 62%
“…r is the radius of the contact between the coneshaped electrode and the electrolyte, from which the contact area can be calculated. Some measurements on ceramic cone-shaped electrodes have already been undertaken (10)(11)(12)(13)(14). It seems like this technique is very useful when comparing different electrode materials.…”
Section: (1) Introductionmentioning
confidence: 99%
“…For example, our recent result showed that the sub 1 nm equivalent oxide thickness (EOT) high-k stack was achieved with a proper interface layer structure prepared under a tight annealing condition. 65) Since most a-Si:H TFT processes are done at low temperatures and under thermodynamically non-equilibrium conditions, the experience would be useful for the nano-size device fabrication on large-size wafers.…”
Section: High-k Gate Dielectricsmentioning
confidence: 99%