Ge-Au eutectic bonding of Ge {100} single crystals

Knowlton, William B.; Itoh, Kazuo; Beeman, J. W.; Emes, J.; Loretto, D.; Häller, E. E.

doi:10.1007/bf00693444

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…Therefore semiconductor interlayer bonding is promising to obtain Ge/Si wafers without an oxidation layer [11] in 400℃. Conventionally, the intermediate bonding layer consisting of gold-tin (Au-Sn) [12], gold-germanium (Au-Ge) [13] or gold-silicon (Au-Si) [14] is easy to realize eutectic bonding by change melt temperature. Thus far, this method is mainly used in hightemperature power devices [15], but not supportable for most optoelectronic devices [16,17] due to the high cost and thermo-compression process.…”

Section: Introductionmentioning

confidence: 99%

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Wang

Zhang

Huang

et al. 2021

J Mater Sci: Mater Electron

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Low temperature bonding technologies is necessary in next-generation photonic integrated circuits, such as exible optoelectronic devices, low dark current Ge/Si devices and so on. Since Germanium-Tin (GeSn) alloy has lower crystallization temperature, in this work, amorphous GeSn with 5% Sn alloy by magnetron sputtering is introduced as an intermediate layer for wafer bonding innovatively. And high strength Ge/Si heterojunction with a crystal GeSn layer is realized without any surface activation process. Two mechanisms in the interlayer crystallization are put forward and substantiated experimentally and theoretically: 1) the a-GeSn turns to be poly-GeSn due to the induction of the c-Ge substrate. 2) Stress between Si wafer and interlayer due to thermal mismatch contributes to the crystallization. It is concluded that GeSn semiconductor interlayer bonding would be one of the potential technologies for bonding process.

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Section: Introductionmentioning

confidence: 99%

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Wang

Zhang

Huang

et al. 2021

J Mater Sci: Mater Electron

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“…In addition, the crystal-heatsink decoupling, g, was measured for each configuration of the heatsinking. 9 The maximum pulse height vs. bias for each thermistor was measured for a given heater energy deposition. By scaling pulse height by the energy deposition and the mass of the crystal on which the thermistor is mounted, the performance of thermistors attached to different devices can be compared.…”

Section: Ntd Thermistormentioning

confidence: 99%

<title>Cryogenic germanium detectors for a weakly interactive massive particle (WIMP) dark-matter search</title>

et al. 1994

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We are preparing an experimental search for weakly interacting massive particle (WIMP) dark matter using cryogenic germanium detectors. These detectors measure both the ionization and phonons produced by particle interactions in the substrate. The ionization measurement uses low drift fields, =4 V/cm. The phonon measurement is made using neutron transmutation doped (NTD) germanium thermistors. Simultaneous detection of phonons and ionization allows us to discriminate between electron-recoil and nuclear-recoil events which gives a powerful method for isolating possible WIMP events (nuclear recoils) from background gamma ray events (electron recoils). Recent work on our understanding and optimization of these detectors will be presented.

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Particle detection and non-equilibrium phonons: Experience with large germanium crystals and NTD Ge thermistors

Sadoulet

Akerib

Barnes

et al. 1996

Physica B: Condensed Matter

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Ge-Au eutectic bonding of Ge {100} single crystals

Cited by 3 publications

References 2 publications

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding

<title>Cryogenic germanium detectors for a weakly interactive massive particle (WIMP) dark-matter search</title>

Particle detection and non-equilibrium phonons: Experience with large germanium crystals and NTD Ge thermistors

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