2022
DOI: 10.35848/1347-4065/ac4d02
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Ge-codoping effect on X-ray-induced photodarkening in Al-doped and Dy-Al-doped silica glass

Abstract: X-ray induced photodarkening and its suppression by Ge-codoping were investigated in Al-doped, Dy-doped, and Dy-Al-doped silica glasses. Absorption bands of 4f-4f5d transition of Dy2+ were determined in Dy-Al-doped silica glass fabricated by Si nano-powders as a reducing agent, and it was found that pair generation of Dy2+ and Al-OHC was occurred in X-ray irradiated Dy-Al-doped silica glass. Ge-codoping suppresses the above-mentioned pair generation and instead forms the pair of GEC and GLPC+. Similar suppr… Show more

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Cited by 3 publications
(10 citation statements)
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“…The Si related defects of NBOHC and Si–E′ were observed at 4.75 and 5.8 eV with FWHM of 1.02 and 0.8 eV respectively, showing absorption at UV region. The Dy 2+ can be generated during UV irradiation 32,33 by reaction of Dy 3+ + e ‒ + hν → Dy 2+ with absorption peaks of 3.60 and 4.72 eV and FWHM of 1.12 and 1.02 eV, respectively 18 . The oxygen deficiency centers (ODC, ≡Si··M≡, M is Si or Al) are generated from Si‐E′ and M‐E′, showing absorption at 5.08 eV with FWHM of 0.81 eV.…”
Section: Resultsmentioning
confidence: 99%
“…The Si related defects of NBOHC and Si–E′ were observed at 4.75 and 5.8 eV with FWHM of 1.02 and 0.8 eV respectively, showing absorption at UV region. The Dy 2+ can be generated during UV irradiation 32,33 by reaction of Dy 3+ + e ‒ + hν → Dy 2+ with absorption peaks of 3.60 and 4.72 eV and FWHM of 1.12 and 1.02 eV, respectively 18 . The oxygen deficiency centers (ODC, ≡Si··M≡, M is Si or Al) are generated from Si‐E′ and M‐E′, showing absorption at 5.08 eV with FWHM of 0.81 eV.…”
Section: Resultsmentioning
confidence: 99%
“…By Ge-codoping, GEC and GLPC + are easily generated, and Dy 2+ and Al-OHC are hard to be generated, since the trap levels of GEC and GLPC + are deeper than those of Dy 2+ and Al-OHC. 8) On the other hand, in the case of LD-PD, the defects are caused via excitation of Dy 3+ by 450 nm LD. This can be confirmed from the fact that PD does not occur in F (0).…”
Section: Difference Between X-ray Induced and 451 Nm Ld Pump-induced ...mentioning
confidence: 99%
“…In order to investigate PD in Dy-doped silica glass in detail, defect formation induced by X-ray was investigated in the preforms. 7,8) Al-OHC [Al Oxygen Hole Center: ≡Al-O ̇-Si≡ (≡ denotes triple-fold coordination with O, and・denotes a paramagnetic electron)] 9,10) and Dy 2+ are pair-generated. 8) Figure 1(a) shows our proposed model of local structure before and after X-ray-induced-PD (X-PD).…”
Section: Introductionmentioning
confidence: 99%
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