2018
DOI: 10.3390/photonics5020013
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Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

Abstract: Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one of the most promising candidates. In this study, we use a Ge-core/a-Si-shell nanowire coupled to a bow-tie antenna to fabricate a FET structure for terahertz detection. We achieved high responsivity and low noise eq… Show more

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Cited by 18 publications
(7 citation statements)
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References 33 publications
(45 reference statements)
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“…Advances might include more sophisticated algorithms for dynamic pruning and quantization that adapt to real-time data inputs [31][32][33][34][35][36][37][38] , potentially increasing both accuracy and efficiency. In addition, the hardware should be also improved to be more compatible with these algorithms [39][40][41][42][43][44][45] . Furthermore, as edge computing grows, the demand for lightweight models that can operate independently of large data centers will likely increase, amplifying the importance of effective compression techniques.…”
Section: Discussionmentioning
confidence: 99%
“…Advances might include more sophisticated algorithms for dynamic pruning and quantization that adapt to real-time data inputs [31][32][33][34][35][36][37][38] , potentially increasing both accuracy and efficiency. In addition, the hardware should be also improved to be more compatible with these algorithms [39][40][41][42][43][44][45] . Furthermore, as edge computing grows, the demand for lightweight models that can operate independently of large data centers will likely increase, amplifying the importance of effective compression techniques.…”
Section: Discussionmentioning
confidence: 99%
“…Combining ANFIS with nature-inspired optimization algorithms involves integrating the strengths of both approaches to enhance the modeling and optimization capabilities [ [54] , [55] , [56] , [57] , [58] , [59] , [60] , [61] ]. This integration approach allows for the creation of a hybrid system that benefits from the modeling capabilities of ANFIS and the optimization power of nature-inspired algorithms, potentially leading to improved model accuracy and generalization.…”
Section: Methodsmentioning
confidence: 99%
“…FETs and HEMTs are now favorable in the development of low noise and unbiased THz detectors. The fabrication technology readiness in Silicon and semiconductor foundry process have possessed a broad range of CMOS-and III-V material-based THz detectors [47], [48]. The fundamental limit in the rectifying detector is the parasitic effects generated from the electronic read-out components (resistors, capacitances, and inductances) that increase linearly with the frequency.…”
Section: B Operation Principlesmentioning
confidence: 99%