2008
DOI: 10.1002/pssb.200879589
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Ge‐doping dependence of gamma‐ray induced germanium lone pair centers in Ge‐doped silica

Abstract: We report an experimental study on the γ irradiation effects in Ge‐doped sol‐gel silica samples doped with Ge from 102 up to 104 part per million molar. The samples were exposed to the radiation generated by a 60Co source up to an accumulated dose value of 10 MGy. Our data evidence that the γ irradiation significantly increases the number of Germanium Lone Pair Centers (GLPC). Such defects are induced with a concentration that depends on the Ge content of the employed material in those samples where no optical… Show more

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Cited by 3 publications
(3 citation statements)
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“…In addition to the generation and the growth of the paramagnetic Ge related point defects and of the associated optical absorption bands, we observed the generation and the growth of the GLPC also by b irradiation, in agreement with the findings after c-ray exposure [24,25]. In Fig.…”
Section: Resultssupporting
confidence: 90%
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“…In addition to the generation and the growth of the paramagnetic Ge related point defects and of the associated optical absorption bands, we observed the generation and the growth of the GLPC also by b irradiation, in agreement with the findings after c-ray exposure [24,25]. In Fig.…”
Section: Resultssupporting
confidence: 90%
“…In particular, the generation of Ge(1), E'Ge and H(II) has been considered. In addition to these types of point defects we investigate for the first time the generation of GLPC under b irradiation and we compare the results with those recently obtained by c irradiation [24,25].…”
Section: Introductionmentioning
confidence: 97%
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