Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

Болтовец, Н. С.; Kholevchuk, V. V.; Конакова, Р. В.; Mitin, V. F.; Venger, É. F.

doi:10.1016/s0924-4247(01)00562-3

Cited by 36 publications

(24 citation statements)

References 8 publications

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“…These SOI p-n junction diode temperature sensors, fabricated on a micro-airbridge, were used for humidity and vacuum sensing applications [14], [15]. There are few reports on high temperature performance and/ or analysis of bulk silicon based diode temperature sensors as well [16]- [18], but none of these reports deals with the temperature sensing characteristics of silicon diodes 1530-437X/$26.00 © 2010 IEEE beyond 377 C. For instance, Ang [16] investigated the electrical characteristics of epitaxial high-low junction n+-n-p+ silicon diodes in the temperature range 27 C to 310 C; in [17], Boltovets et al reported on forward voltage characteristics of a silicon diode temperature sensor from 0-600 K ( C to 327 C ), while Shwarts et al [18] explored silicon diode temperature sensors' characteristics to a maximum temperature of 650 K (377 C).…”

Section: Introductionmentioning

confidence: 99%

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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Silicon diodes can be used for accurate temperature monitoring up to higher temperatures in a variety of sensors such as micro-machined resistive and calorimetric gas sensors, thermal flow sensors, exhausts, etc. This paper investigates the performance of a diode temperature sensor when operated at ultra high temperatures (up to 780 C). A low leakage silicon on insulator (SOI) diode was designed and fabricated in a 1.0 m CMOS (complementary metal oxide semiconductor) process. The diodes were suspended within a dielectric membrane [formed by post CMOS deep reactive ion etching (DRIE)] for efficient thermal insulation. A CMOS compatible micro-heater was integrated with the diode on the dielectric membrane for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We show experimentally that the maximum temperature up to which the linearity of diode's forward voltage output is maintained can be as high as 550 C. Long term continuous operation at high temperatures (400 C and 500 C) showed good stability of the diode voltage drop. Finally, we present a detailed theoretical analysis that helps to determine the maximum operating temperature for the diode and also explains the presence of nonlinearity factors in diode voltage output at ultra high temperatures.

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Section: Introductionmentioning

confidence: 99%

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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“…In conclusion, we have observed that the resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increased at low temperature, 10 4 ³10 5 times, between 5 and 100 K. The …”

Section: Resultsmentioning

confidence: 57%

Large Electrical Resistance Variation at Low Temperature in Transition Metal-Doped Ge Single Crystals

Choi

et al. 2015

Mater. Trans.

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We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increased, 10 4 ³105 times, between 5 and 100 K, which were 100 times larger than that of the commercial Ge resistance temperature device (RTD). The large variation of electrical resistance at low temperature arises from decreased carrier density and mobility at low temperature. The mobility reduction at low temperature might be caused by ionized impurity scattering.

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“…The challenge here is, given that the heating elements operate hundreds of degree celsius, the temperature sensors need to withstand in excess of 300°C. To meet this challenge, diode as a temperature sensor is a more suitable device than others as (i) it is extremely small in size; (ii) conduction losses to the substrate are minimized as they do not provide thermal bridge between the hot and cold zones of the chip; (iii) they offer wide range of temperature measurement; (iv) sensitivity enhancement can be easily obtained under high flow velocities by realizing in array form [55] and (v) strong temperature dependence on their forward bias voltage drop (4.2-888K) [56]. In contrary, transistors have also been used in anemometric configurations, often because of they are accurate absolute temperature sensors.…”

Section: Thermoelectronic Flow Sensingmentioning

confidence: 99%

Thermal Flow Sensors for Harsh Environments

Balakrishnan

Phan

Dinh

et al. 2017

Preprint

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Flow sensing in hostile environment is of increasing interest for applications in automotive, aerospace, and chemical and resource industries. Compared to their counterparts, thermal flow sensors are attractive candidates due to the ease of fabrication, lack of moving parts and higher sensitivity. Recently, a number of thermal flow sensor prototypes have been reported in the literature demonstrating the measurement of fluid flows under hostile conditions. This paper summarizes the concept of thermal flow sensing, operational modes and transduction mechanisms. Then, the choice of materials and their corresponding properties are presented in details. The paper also reports recent progress in the development of thermal flow sensors for harsh environment. In addition, the issues and considerations in packaging are reviewed. Finally, we conclude the review with the future prospects.

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Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

Cited by 36 publications

References 8 publications

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Large Electrical Resistance Variation at Low Temperature in Transition Metal-Doped Ge Single Crystals

Thermal Flow Sensors for Harsh Environments

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