Ge in main-stream CMOS: a future or fancy?

Kalavade, P.; Shulze, J.

doi:10.1109/drc.2004.1367855

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2006

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“…With continuing device scaling and recent trends in gate dielectrics evolution, there has currently been renewed interest in utilizing germanium to complement silicon in devices due to its higher carrier mobility . Many studies have been carried out using Ge as a channel material in high-speed field-effect transistors (FETs). − …”

Section: Introductionmentioning

confidence: 99%

Highly Stable Monolayer Resists for Atomic Layer Deposition on Germanium and Silicon

Chen

Bent

2006

Chem. Mater.

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In this paper, 1-alkenes and 1-alkynes are investigated for a new class of monolayer resists formed on the hydrogen-terminated surfaces of both germanium and silicon. A series of 1-alkenes and 1-alkynes with different chain lengths are explored as deactivating agents for atomic layer deposition of HfO2 and Pt films. It is shown that to achieve satisfactory blocking of atomic layer deposition, densely packed, highly hydrophobic monolayers must be formed. A mechanism for the film formation and blocking processes is discussed and compared with that of alkylsilane-based self-assembled monolayer resists.

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Section: Introductionmentioning

confidence: 99%