Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

Aktağ, Aliekber; Yılmaz, Ercan; Mogaddam, Nader A.P.; Aygün, Gülnur; Cantaş, Ayten; Turan, Raşit

doi:10.1016/j.nimb.2010.09.007

Cited by 13 publications

(8 citation statements)

References 24 publications

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“…On the other side, some experimental studies on the MOS capacitors having the oxide with high-k dielectric have shown that their responses to 60 Co gamma source are higher than traditional MOS capacitor with SiO2 gate oxide [22][23][24]. There are also studies showing that MOS capacitors with different dielectrics are less sensitive to radiation compared to the structure with SiO2 [25][26]. These results may also be valid for the pMOS transistor including the MOS structure.…”

Section: Introductionmentioning

confidence: 88%

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Kahraman

Yılmaz

2017

SAÜ Fen Bilimleri Enstitüsü Dergisi

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The aim of the present study is to determine the pre-irradiation threshold voltages of the RadFET dosimeters with gate oxide composed of high-k dielectrics and compare the results with the traditional sensors, the gate oxide of which is composed of SiO2. The effects of the p + regions with different concentration, depth and length on the electrical characteristic of the RadFETs were also investigated in the study. For these purposes, Al2O3, HfO2 high-k dielectrics and SiO2 with the thicknesses of 400 nm were used as the sensitive regions of the dosimeters. The sensors were designed in the Silvaco TCAD simulation program. While the lengths of the p + regions changed the Id-Vg characteristics of the RADFETs, the depths and concentrations until a certain value of these regions did not play an important role in electrical characteristic. The lowest threshold voltages obtained from the SiO2, Al2O3 and HfO2-RadFETs were found to be-5.22,-3.63, and-3.10 V, respectively. These results demonstrated that RadFETs with high-k dielectrics may be promising candidate for the new generated dosimeters in terms of broader measurable dose range providing their radiation tests.

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Section: Introductionmentioning

confidence: 88%

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Kahraman

Yılmaz

2017

SAÜ Fen Bilimleri Enstitüsü Dergisi

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“…1, the important modifications for curves are translations of flatband voltages (V fb ) toward negative voltage axis. The type of generated trap states in the MOS devices such as interface states and oxide traps are responsible for these voltage shifts [23,24]. In other words, the negative voltage shifts are due to trapping of generated holes.…”

Section: Resultsmentioning

confidence: 99%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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“…The problem can be overcome by the usage of nanocrystals as discrete charge storage nodes; in this case a single leakage path will discharge a few nearest nanocrystals and this will not lead to significant decrease of the trapped charge and of the internal electric field. Recently, experiments have been reported [22] on floating gate MOSFETs containing Ge nanocrystals in the oxide layer. It has been shown that the presence of nanocrystals improves the radiation resistance of the detectors but shifts the sensitivity range to quite high doses.…”

Section: Introductionmentioning

confidence: 99%

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

et al. 2014

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This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO 2 layer when applying the two-step annealing. Two types of MOS structures with three region gate dielectrics were fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

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Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

Cited by 13 publications

References 24 publications

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Farklı kapı oksitli RadFET dozimetrelerinin ışınlama öncesi elektriksel karakterizasyonlarının TCAD simülasyon programı ile değerlendirilmesi

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

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