2007
DOI: 10.1063/1.2759982
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Ge-on-glass detectors

Abstract: A single crystalline thin film of Ge on glass is fabricated using wafer bonding and smart cut. A simple metal-insulator-semiconductor detector is demonstrated for visible light and telecommunication wavelength. The implantation damage of separated Ge film bonded on glass is removed by chemical etching, and the surface roughness is reduced from 14to4nm. The defect removal reduces the dark current by a factor of 30 and increases the responsivity by a factor of 1.85 at visible wavelength. The responsivity of 0.27… Show more

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Cited by 15 publications
(5 citation statements)
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“…Using the smart-cut process technique, thin film Ge layers were also transferred onto a transparent glass substrate and a flexible polyimide substrate to form Ge-on-glass (GOG) [ 62 ] and Ge-on-polyimide (GOP) [ 63 ] structures. The responsivities of GOG and GOP MIS photodetectors are shown in Figure 22(a) and Figure 22(b) , respectively.…”
Section: Mis Visible-to-near-ir Photodetectorsmentioning
confidence: 99%
See 1 more Smart Citation
“…Using the smart-cut process technique, thin film Ge layers were also transferred onto a transparent glass substrate and a flexible polyimide substrate to form Ge-on-glass (GOG) [ 62 ] and Ge-on-polyimide (GOP) [ 63 ] structures. The responsivities of GOG and GOP MIS photodetectors are shown in Figure 22(a) and Figure 22(b) , respectively.…”
Section: Mis Visible-to-near-ir Photodetectorsmentioning
confidence: 99%
“… The responsivities of: (a) GOG MIS photodetectors; (b) GOP MIS photodetectors. Reprinted from [ 62 , 63 ] with permission of the American Institute of Physics (Copyright 2007 & 2009). …”
Section: Figurementioning
confidence: 99%
“…The thicknesses range from 1.5 to 300 m. The single crystalline film of $1:5 m is possible using the technology of smartcut. 10,11) The light at a short wavelength could be absorbed within a thin layer. For example, the responsivity at the 450 nm wavelength is quite large even when the thickness of crystalline Si is only 1.5 m. Hence, if the target wavelength is 450 nm, the active layer can be as thin as possible to reduce the material consumption.…”
Section: Resultsmentioning
confidence: 99%
“…We also tested single-crystalline Si of 1.5 μm thickness. Such thin single-crystalline Si is possible due to smart-cut technology [ 8 , 9 ]; thus, material consumption can be reduced significantly. The enhancement due to the increase of the a-Si:H(i) layer is far more significant when a thinner single crystal Si wafer is used.…”
Section: Introductionmentioning
confidence: 99%