Ge-on-insulator fabrication based on Ge-on-nothing technology
Keisuke Yamamoto,
Dong Wang,
Roger Loo
et al.
Abstract:Ge-on-Insulator (GOI) is considered a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach a regular macropore array is formed by lithography and dry etching. These pores close and merge upon annealing, forming a suspended monocrystalline Ge membrane on one buried void. GOI is fabricated by direct bonding of GeON on Si carrier substrates, using an oxide bonding interface, and subsequent detac… Show more
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