Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

Malik, Aditya; Dwivedi, Sarvagya; Landschoot, Liesbet Van; Muneeb, Muhammad; Shimura, Yosuke; Lepage, Guy; Campenhout, Joris Van; Vanherle, W.; Opstal, Tinneke Van; Loo, Roger; Roelkens, Günther

doi:10.1364/oe.22.028479

Cited by 106 publications

(67 citation statements)

References 13 publications

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“…Mid-IR integrated thermo-optic modulators have already been fabricated in SOI [144], Ge-on-Si [145], and silicon-on-sapphire [146]. Figure 9 shows one example of a SOI-based MZI switch [144].…”

Section: Thermo-optic Switchesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Thermo-optic Switchesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…While a number of passive MIR photonic waveguides and devices have been constructed on a variety of silicon waveguide platforms [5][6][7][8], the development of integrated active components on silicon for longer wavelengths has been more limited. Thermo-optic phase shifters for the 5 µm range [9], heterogeneously integrated InP-based type-II photodiodes for wavelengths up to 2.4 µm [10], demultiplexers for the 2 µm range utilizing an array of similar photodiodes [11], a fully integrated spectrometer utilizing an array of InAs 0.91 Sb 0.09 -based photodiodes for 3-4 µm [12], and multiple-quantum-well InGaAs lasers which emit 2.01 µm light in continuous wave (CW) mode at room temperature [13] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon

et al. 2016

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Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100˝C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning.

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“…Mis en forme : Indice µm while using a fully monolithic and robust approach [9][10][11]. Furthermore, the implementation of Ge-based optical systems provides good prospects to develop nonlinear mid-IR optical devices, owing to its larger nonlinear refractive index than Si and the suppression of two-photon absorption in Ge for λ > 3.17 µm [12].…”

Section: Mis En Forme : Indicementioning

confidence: 99%

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Ramírez¹,

Vakarin²,

Frigerio³

et al. 2017

Opt. Express

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To cite this version:J-M Ramirez, V Vakarin, J Frigerio, P Chaisakul, D Chrastina, et al.. Ge-rich graded-index Si 1-x Ge x waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics. Optics Express, Optical Society of America, 2017, 25 (6) Abstract:This work explores the use of Ge-rich graded-index Si 1-x Ge x rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si 1-x Ge x waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~ 1.4 octave span while retaining an optimum third-order nonlinear parameter, γ eff . These results confirm the potential of Ge-rich graded-index Si 1-x Ge x waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

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Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

Cited by 106 publications

References 13 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

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