Geant4 simulation of Hg_1–<i>x</i>Cd_<i>x</i>Te infrared focal plane array image sensor space proton displacement damage and total ionizing dose effects

Abstract

A large-format, high-resolution Hg&lt;sub&gt;1-x&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;Te infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will fully adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg&lt;sub&gt;1-x&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;Te IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This paper focuses on a 55nm manufacturing process Hg&lt;sub&gt;1-x&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;Te IRFPA sensor widely used in image sensors, using a 2×2 basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations were conducted for different proton irradiation fluences, including 10&lt;sup&gt;10&lt;/sup&gt;, 10&lt;sup&gt;11&lt;/sup&gt;, 10&lt;sup&gt;12&lt;/sup&gt; and 10&lt;sup&gt;13&lt;/sup&gt; cm&lt;sup&gt;-2&lt;/sup&gt;. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution and others. It was found that, at a proton cumulative fluence of 10&lt;sup&gt;13&lt;/sup&gt; cm&lt;sup&gt;-2&lt;/sup&gt;, in addition to considering the displacement damage effect in the Hg&lt;sub&gt;1-x&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;Te IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, the study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This research provides crucial data support for the space applications of future large-format Hg&lt;sub&gt;1-x&lt;/sub&gt;Cd&lt;sub&gt;x&lt;/sub&gt;Te IRFPA image sensors.