General approach on chemistry and stress coupling effects during oxidation

Suo, Yaohong; Shen, Shengping

doi:10.1063/1.4826530

Cited by 44 publications

(9 citation statements)

References 36 publications

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“…The parameters related to the creep will also affect the calculation results, which have already been discussed by many researchers . We do not duplicate the discussion because the main conclusions are similar.…”

Section: Resultsmentioning

confidence: 96%

“…The lateral growth strain of the oxide,

ε_{normalox}^{g}

, and the thermal strain, ε θ , induced by the mismatch between the coefficients of thermal expansion (CTE) of the oxide and substrate may dominate the stress state simultaneously for a general oxidation condition with temperature change. Following the suggestion by Clarke,

ε_{normalox}^{g}

can be determined as follows by assuming its rate linearly proportional with the growth rate of the oxide, which has been widely used by many researchers,

{\overset{ε}{true}}_{ox}^{normalg} = D_{normalox} {\overset{h}{true}}_{normalox}

where D ox is the lateral growth coefficient depending on the microstructure and temperature. The thermal strain can be neglected in the case of isothermal oxidation.…”

Section: The Tcm Modelmentioning

confidence: 99%

“…The lateral growth strain of the oxide, e g ox , and the thermal strain, e h , induced by the mismatch between the coefficients of thermal expansion (CTE) of the oxide and substrate may dominate the stress state simultaneously for a general oxidation condition with temperature change. Following the suggestion by Clarke, 31 e g ox can be determined as follows by assuming its rate linearly proportional with the growth rate of the oxide, which has been widely used by many researchers, 33,36,44,45…”

Section: The Tcm Modelmentioning

confidence: 99%

See 2 more Smart Citations

A Thermo‐Chemo‐Mechanical Model for the Oxidation of Zirconium Diboride

2014

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A thermo-chemo-mechanical model was proposed, which couples the oxidation rate of ZrB 2 between 1000°C and 1800°C with the induced mechanical stress in the oxide scale. The model includes the mechanism for the coupling effect. Due to the special porous microstructure of the oxide, the diffusivities of the oxidation reactants and products through the columnar pores dominate the oxidation kinetics. The pores in the oxide shrink under the compressive stress generated during the oxidation due to the constraint from the substrate to the lateral growth of the oxide. And the shrinkage reduces the Knudsen diffusivities of both the molecular oxygen coming inward and the liquid boria evaporating outward. Consequently, the oxidation rate is reduced, which also affects the stress state. Mechanical approaches, such as Mori-Tanaka homogenization method and laminate theory were adopted in the model to quantitatively describe the coupled effect. The evolutions of oxide thickness, pore diameter, and stresses in both the oxide and the substrate were predicted with the model, which showed that the oxidation rate can be significantly altered by the stress-diffusion coupling during isothermal oxidation, especially at higher temperatures in the range 1000°C-1800°C.

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Section: Resultsmentioning

confidence: 96%

“…The lateral growth strain of the oxide,

ε_{normalox}^{g}

ε_{normalox}^{g}

can be determined as follows by assuming its rate linearly proportional with the growth rate of the oxide, which has been widely used by many researchers,

{\overset{ε}{true}}_{ox}^{normalg} = D_{normalox} {\overset{h}{true}}_{normalox}

where D ox is the lateral growth coefficient depending on the microstructure and temperature. The thermal strain can be neglected in the case of isothermal oxidation.…”

Section: The Tcm Modelmentioning

confidence: 99%

Section: The Tcm Modelmentioning

confidence: 99%

See 1 more Smart Citation

A Thermo‐Chemo‐Mechanical Model for the Oxidation of Zirconium Diboride

2014

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“…Rambert et al [3] investigated the process in which heat conduc tion, mass diffusion, chemical reactions and gradient-type elastic strain mechanisms interact. With the coupled evolving equations, Suo and Shen [4] discussed the mechanism of growth strain by considering the coupling effects of stress and chemical reactions during isothermal oxidation. The effects of mechanics and diffu sion on the oxidation of metal were discussed in Dong et al [5,6], ' where a model is proposed to predict and analyze the stress evolu tion of the oxide film/metal substrate system for single surface ox idation.…”

Section: Introductionmentioning

confidence: 99%

A Fully Coupled Theory and Variational Principle for Thermal–Electrical–Chemical–Mechanical Processes

Shen

2014

Journal of Applied Mechanics

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Thermal-electrical-chemical-mechanical coupling controls the behavior of many trans port and electrochemical reactions processes in physical, chemical and biological sys tems. Hence, advanced understanding of the coupled behavior is crucial and attracting a large research interest. However, most o f the existing coupling theories are limited to the partial coupling or particular process. In this paper, on the basis of irreversible thermo dynamics, a variational principle for the thermal electrical chemical mechanical fully coupling problems is proposed. The complete fully coupling governing equations, includ ing the heat conduction, mass diffusion, electrochemical reactions and electrostatic potential, are derived from the variational principle. Here, the piezoelectricity, conduc tivity, and electrochemical reactions are taken into account. Both the constitutive rela tions and evolving equations are fully coupled. This theory can be used to deal with coupling problems in solids, including conductors, semiconductors, piezoelectric and nonpiezoelectric dielectrics. As an application of this work, a developed boundaiy value problem is solved numerically in a mixed ion-electronic conductor (M1EC). Numerical results show that the coupling between electric field, diffusion, and chemical reactions influence the defect distribution, electrostatic potential and mechanical stress.

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“…Lots of subsequent analytical models followed Clarke's idea. [15][16][17][18][19][20] However, in Clark's model, the effect of interfacial defects, such as misfit dislocation, on the growth strain of oxidation layer was not considered.…”

Section: Introductionmentioning

confidence: 99%

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

Zhang

2015

AIP Advances

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This work provided an analytical model to solve the coupled mechanical-oxidation problem during the silicon thermal oxidation process. The silicon thermal oxidation behavior under two different mechanical load conditions, i.e., constant strain and uniaxial stress, were considered. The variations of oxide stress and scale thickness along with oxidation time were predicted. During modeling, all the effects of stress accumulation due to growth strain, stress relaxation due to viscous flow and the external load on the scale growth rate were taken into consideration. Results showed that the existence of external loads had an obvious influence on the oxide stress and scale thickness. Generally, tensile stress or strain accelerated the oxidant diffusion process. However, the reaction rate at the Si/SiO2 interface was retarded under uniaxial stress, which was not found in the case of constant strain load.

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General approach on chemistry and stress coupling effects during oxidation

Cited by 44 publications

References 36 publications

A Thermo‐Chemo‐Mechanical Model for the Oxidation of Zirconium Diboride

A Thermo‐Chemo‐Mechanical Model for the Oxidation of Zirconium Diboride

A Fully Coupled Theory and Variational Principle for Thermal–Electrical–Chemical–Mechanical Processes

Coupled mechanical-oxidation modeling during silicon thermal oxidation process

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