Self-compensated (SC) hole-doped conjugated polyelectrolytes
with
high work functions can provide efficient hole-injection and -collection
layers for organic and other semiconductor devices. If these films
can be photocrosslinked, the semiconductor overlayer can be deposited
from a wider range of solvents, enabling flexibility in device design
and fabrication. However, a generic photocrosslinking methodology
for these materials is not yet available. Here, we demonstrate that
sFPA82-TfO, the recently developed bis(fluorophenyl azide) photocrosslinker
that is also i-line compatible, can surprisingly give 100% efficient
photocrosslinking for SC hole-doped conjugated polyelectrolytes, i.e.,
one crosslink per reactive moiety, using mTFF-C2F5SIS-Na, a triarylamine–fluorene copolymer, as the model polyelectrolyte,
without degrading its ultrahigh work function of 5.75 eV. The photocrosslinking
efficiency is much higher than in the corresponding undoped polyelectrolyte
and nonconjugated polyelectrolyte films, where the efficiency is only
20%. We attribute this improvement to the formation of smaller ion
multiplet clusters in the hole-doped polyelectrolyte, as suggested
by molecular dynamics simulations and infrared spectroscopy, which
prevents occlusion of the ionic crosslinker. Photocrosslinking of
the SC hole-doped mTFF-C2F5SIS-Na film used
as a hole-injection layer in 100 nm-thick PFOP diodes suppresses the
leakage current by over 3 orders of magnitude compared to those without
crosslinking, to below 30 nA cm–2 at ±2 V.
Photocrosslinking of the same film used as the hole-collection layer
in PBDTTPD:PC61BM solar cells produces a higher photocurrent
density, fill factor, and power conversion efficiency.